.13um gate leakage can be ignored since the leakage current highly depends on the thickness of gate oxide.
As for the ESD of DCAP, if a large current is injected to the dcap, the serial resistor to the gate will limit the increase of the voltage on the gate thus protect the gate oxide. But one the other side, the resistor should be small enough to keep good RC constant of DCAP. So there will be tradeoff between ESD and transient response speed.
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发表于 2012-11-8 12:01:49
发表于 2012-12-20 09:45:27
