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[求助] silvaco模拟LDMOS程序修改

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发表于 2014-5-22 09:57:16 | 显示全部楼层 |阅读模式

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懂得加我QQ1479496415,必有重谢    下面是程序:
    go athena

#

line x loc=0.00 spac=0.5

line x loc=5.00 spac=0.5

line x loc=20.00 spac=0.5

line x loc=52.00 spac=0.5

#

line y loc=4.00 spac=0.01

line y loc=5.00 spac=0.01

#p-type substrate

init c.boron=2e10 orientation=100 space.mult=2

deposit oxide thickness=4

epitaxy time=20 temp=850 thickness=1 divisions=15\

        dy=0.10 ydy=0.00 phosphourus conc=9e15

#p-body

deposit nitride thickness=1

etch nitride p1.x=11 left

implant boron does=9e12 energy=50

diffus time=8 temp=1150 hcl=3

etch nitride all

deposit nitride thickness=2

etch nitride start x=11 y=-2

etch continue x=11 y=-1

etch continue x=49 y=-1

etch done x=49 y=-2

implant phosphorus does=2e14 energy=50

diffus time=15 temp=800

etch nitride all

#Source & Drain

deposit nitride thickness=3

etch nitride p1.x=5 left

etch nitride p1.x=47 right

implant arsenic does=3e15 energy

diffus time=30 temp=1150 hcl=3

etch nitride all

#gate oxide

deposit oxide thickness=0.05

etch oxide p1.x=5 left

etch oxide p1.x=50 right

deposit nitride thickness=0.35

etch nitride star x=13 y=-1.5

etch continue x=13 y=-1

etch continue x=47 y=-1

etch done x=47 y=-1.5

diffus time=73 temp=1000 weto2 press=1.3 hcl=3

etch nitride all

#gate metal

deposit polysilicon thickness=0.475

etch polysilicon p1.x=5 left

etch polysilicon p1.x=20 right

deposit oxide thickness=0.5

etch oxide p1.x=4.5 left

etch oxide p1.x=50 right

#Source and Drain metal

deposit ALUMINUM thickness=1

etch aluminum star x=7 y=-3

etch continue x=7 y=-1.7

etch continue x=40 y=-1.7

etch done x=40 y=-3

#name

electrode name=source x=2 y=-1.5

electrode name=drain x=45 y=-2

electrode name=gate x=10 y=-1.2

go atlas

# set material models

models cvt srh print

contact name=gate n.poly

interface qf=2e8

method gummel newton

solve init

#Bias the drain

solve vdrain=1

#Ramp the gate

log outf=mos1ex01_1.log master

solve vgate=0 vstep=0.1 vfinal=5 name=gate

save outf=mos1ex01_1.str

#plot results

tonyplot mos1ex01_1.log

#extract device parameters

extract name="nvt"(xintercept(maxslope(curve(abs(v."gate"),abs(i."drain"))))\

    -abs(ave(v."drain"))/2.0)

extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain"))))\

    *(1.0/abs(ave(v."drain")))

extract name="ntheta"((max(abs(v."drain"))*$"nbeta")/max(abs(i."drain")))\

    -(1.0/(max(abs(v."gate"))-($"nvt")))

go atlas

#define the Gate workfunction

contact name=gate n.poly

#Define the Gate Qss

interface qf=4e11

#Use the cvt mobility model for MOS

model cvt srh print numcarr=2

#set gate biases with Vds=0.0

solve init

solve vgate=0 outf=solve_tmp0

solve vgate=3 outf=solve_tmp1

solve vgate=4 outf=solve_tmp2

solve vgate=5 outf=solve_tmp3

#load in temporary files and ramp Vds

load infile=solve_tmp0

log outf=vgate=0.log

solve name=drain vdrain=0 vfinal=15 vstep=1

load infile=solve_tmp1

log outf=vgate=3.log

solve name=drain vdrain=0 vfinal=15 vstep=1

load infile=solve_tmp2

log outf=vgate=4.log

solve name=drain vdrain=0 vfinal=15 vstep=1

load infile=solve_tmp3

log outf=vgate=5.log

solve name=drain vdrain=0 vfinal=15 vstep=1

#extract max current and saturation slope

extract name="nidsmax"max(i."drain")

extract name="sat_slope"slope(minslope(curve(v."drain",i."drain")))

tonyplot-overlay-st vgate=0.log vgate=3.log vgate=4.log vgate=5.log

go atlas

models cvt srh print

impact selb

contact name=gate n.poly

interface qf=3e9

#

solve init

method newton trap maxtraps=10 climit=1e-3 ir.tol=1e-30 ix.tol=1e-30

solve init

solve vgate=2.5 outf=solve_tmp1

solve vsource=0 outf=solve_tmp1

#

load infile=solve_tmp1

log outf=powerex100.log

solve vstep=10 vfinal=360 name=drain compl=3e-5 cname=drain

outf=powerex100_1.str master onefile

extract name="bv"max(v."drain")

#extract device paramenters

extract name="nvt"(xintercept(maxslope(curve(abs(v."gate"),abs(i."drain"))))\

      -abs(ave(v."drain"))/2.0)

extract name="nbeta"slope(maxslope(curve(abs(v."gate"),abs(i."drain"))))\

      *(1.0/abs(ave(v."drain")))

extract name="ntheta"((max(abs(v."drain"))*$"nbeta")/max(abs(i."drain")))\

      -(1.0/(max(abs(v."gate"))-($"nvt")))

tonyplot powerex 100.log

quit
下面是仿真图
1.jpg

很急啊
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