注入区做大一些有什么用？

istart_2002

RT，第二个管子注入区大一些，栅包注入区里边的，什么时候用第二种管子~~~~（浅蓝色虚线为注入）

wfcawy

the injection region is supposed to be active region (AA)?

for mosfet 1, the active region defines the channel weight, so the poly gate should have some extension from the edge of active region.
for mosfet 2, I see no point to draw the layout like this. the poly gate connection is inside the active region, and you don't know how much it is the channel length, and the current distribution from drain to source is not uniform.

istart_2002

the injection region is supposed to be active region (AA)?

for mosfet 1, the active region defin ...
wfcawy 发表于 2013-11-12 18:12

                               
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浅蓝色虚线是注入，深蓝色斜线是active；

wfcawy

回复 3# istart_2002


    OK , i see , then no problem for the mosfet2.

if both the style meet the DRC rules, little difference should happen in simulation.

anyway, larger injection region usually means larger device area if keep others dimensions unchanged.

loopgain

I agree.
There is no difference between MOS1 and MOS2.
Only the region (Active 'AND' Implant) will be doped.
Minor difference: MOS2 will have more doping on gate. It will change the gate resistance a little.

istart_2002

回复  istart_2002


    OK , i see , then no problem for the mosfet2.

if both the style meet  ...
wfcawy 发表于 2013-11-13 09:32

                               
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   在库里是两种不同的器件，没区别为什么要做成两种器件~~~~

istart_2002

I agree.
There is no difference between MOS1 and MOS2.
Only the region (Active 'AND' Implant) will ...
loopgain 发表于 2013-11-13 11:17

                               
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   在库里是两种不同的器件，没区别为什么要做成两种器件~~~~

loopgain

具体哪个工艺？
是不是还有其他区别？

istart_2002

.35bicmos 从版图来看，就是这个区别~

wfcawy

回复 7# istart_2002


    please provide more information on your  library PDK related to the two device.