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发表于 2013-10-25 14:30:29
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本帖最后由 朱立平 于 2013-10-25 16:02 编辑
盡量讓 buck OD (with N+ or P+, buck OD 做成guard ring (guard ring should be wide, contact number as many as possible), 防止Vbs (Vth) 飄移, Vbs = 0 ) 接近MOS的 Source (source OD with contact as many as possible). Source & body terminal as near as possible. 盡量讓 bulk OD & source OD 越近越好 以防止 latch up |
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