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发表于 2011-1-12 18:05:44
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本帖最后由 fhchen2002 于 2011-1-12 18:07 编辑
Authors: HongChin Lin, JainHao Lu, Yen-Tai Lin
This paper appears in 2002 IEEE Asia-Pacific Conference
Abstract:
A new four-phase charge pumping circuit for low supply voltages using 0.6um triple-well CMOS technology to generate high negative boosted voltage is presented. With the new substrate connected technique, the influence of threshold voltagte (-0.94 V) is minimized and the body effect is almost eliminated. A five-stage charge pump can effeciently pump lower than -7V at supply voltage of 1.8V with 100 uA loading current.
Yen-Tai Lin is with eMemory Technology 力旺科技
HongChin Lin and JainHao Lu are with Chung-Hsing Univ. 中興大學 TaiChung 台中, Taiwan |
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