A 150 mA LDO in 0.8 μm CMOS process

体元主人 · 发表于 2009-12-4 10:05:45

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A 150 mA LDO in 0.8 μm CMOS process
The paper presents a 15OmA D O
(low-dropout voltage regulator) designed in
a 0 . 8 C~M OS process. By using wideband
and low-current circuit techniques,
high pe~ormances in terms of transient
response and quiescent current are
obtained with a low-ESR (Equivalent Series
Resistance) load capacitor.