A 150 mA LDO in 0.8 μm CMOS process

体元主人 · 发表于 2009-12-4 10:05:45

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A 150 mA LDO in 0.8 μm CMOS process
The paper presents a 15OmA D O
(low-dropout voltage regulator) designed in
a 0 . 8 C~M OS process. By using wideband
and low-current circuit techniques,
high pe~ormances in terms of transient
response and quiescent current are
obtained with a low-ESR (Equivalent Series
Resistance) load capacitor.

jackal0716 · 发表于 2009-12-10 23:54:01

thans ka lot~~

peter_wang803 · 发表于 2010-11-10 09:00:30

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vlsinaresh · 发表于 2011-3-18 19:38:44

thanks

Desingman · 发表于 2021-2-3 17:10:34

coooooooooool

student321 · 发表于 2021-2-3 20:53:16

kankan

kelkhadiri · 发表于 2021-2-17 06:12:27

mooh2028 · 发表于 2021-2-17 16:19:18

hi that is good

mooh2028 · 发表于 2021-2-17 16:20:17

hi that is good

A 150 mA LDO in 0.8 μm CMOS process

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