【WILEY】Compound Semiconductor Devices Structures and Processing

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List of  Symbols and Abbreviations  ........................................  3
1.1  Introduction  ......................................................  4
1.2  Historical Background  .............................................  4
1.3  Purification  ......................................................  7
1.3.1  General  Purification  Procedures  ....................................  7
1.3.2  Zone Refining and Related Techniques  ...............................  8
1.3.3  Problems with  Specific Compounds  .................................  8
1.3.3.1  InSb and GaSb  ...................................................  9
1.3.3.2  InAs and GaAs  ...................................................  10
1.3.3.3 InP and GaP .....................................................  10
1.3.3.4 I1  -  VI  Compounds  ................................................  10
1.4  Technical Constraints to Melt Growth Techniques  ......................  11
1.4.1  Chemical Reactivity  ...............................................  12
1.4.2  Melting Point  ....................................................  13
1.4.3  Vapor  Pressure  ...................................................  13
1.5  Crystal Growth  ...................................................  13
1.5.1  Horizontal Growth  ...............................................  14
1.5.2  Vertical Growth  ..................................................  16
1.5.3  Crystal Pulling  ...................................................  18
1  S.4  Liquid Encapsulated  Czochralski  (LEC) Pulling  .......................  20
1.5.4.1 The Low Pressure  LEC Technique  ..................................  20
1.5.4.2 The High  Pressure  LEC Technique  ..................................  20
1.6  Crystal Growth of Specific Compounds  ...............................  21
1.6.1  InSb  ............................................................  22
1.6.2  InAs and GaAs  ...................................................  22
1.6.3  InP  .............................................................  24
1.6.4  11-VI  Compounds: General  ........................................  26
1.6.4.1 Bulk Hg, -,Cd,  Te  ................................................  26
1  ~j.4.2  CdTe and Cd, -,Zn,  Te  ............................................  27
1.6.4.3 ZnSe  ............................................................  28
1.6.4.4 ZnS and CdS .....................................................  28
1.7  Fundamental Aspects of Crystal Growth  ..............................  29
1.7.1  Structure  ........................................................  30
1.7.2  Temperature Distribution, Crystal Shape and Diameter Control  .........  30
1.7.3  Solute Distribution  ................................................  33
1.7.4  Constitutional Supercooling  ........................................  34
1.7.5  Facet Effect. Anisotropic Segregation and Twinning ....................  36
1.7.6  Dislocations and Grain Boundaries  ..................................  39
1.8  Wafering and Slice Preparation .......  :  ..............................  40
1.9  References  .......................................................  41

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part  1

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part b

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part 3

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谢谢，资料很难得

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