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Product Description
Extensively revised and updated, this,the second edition of the highly praised text Operation and Modeling ofThe MOS Transistor, has become a standard in academia and industry. Thebook provides a thorough treatment of the MOS transistor-the keyelement of most modern microelectronic chips.
KEY FEATURES
Unified, careful treatment. The book covers in depth the development ofmany important models, ranging from the simple to the sophisticated,with the connection between models clearly identified. Many aspects ofmodeling are covered, including: dc, ac, small-signal, large-signaltransient, quasi-static, nonquasi-static, and noise.
Expandedcoverage. New material is included on a number of topics, includingcharge sheet models, small-dimension effects, noise, and modeling forRF applications.
New chapter on modeling for CAD. A completely newchapter discusses the context, considerations, and pitfalls associatedwith the development of models for computer-aided design, and describesways to evaluate them.
Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.
About the Author
Yannis Tsvidis is at Colombia University.
预览：
http://www.amazon.com/gp/reader/0195170148/ref=sib_dp_pt#reader-link
[ 本帖最后由 iTennis 于 2008-10-31 16:57 编辑 ] |
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发表于 2008-10-31 16:00:44
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