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Chapter 1 Introduction ................................................................................................21
Chapter 2 Background.................................................................................................25
2.1 Technology scaling and threshold voltage variation......................................................25
2.2 Threshold voltage variation categories ..........................................................................29
Chapter 3 Die-to-die and Within-die Threshold Voltage Variations.......................33
3.1 Adaptive body bias........................................................................................................33
3.1.1 Adaptive body bias and short channel effect (SCE)................................................34
3.1.2 Scaling of required body bias and SCE increase.....................................................33
3.1.3 Impact on within-die threshold voltage variation....................................................41
3.1.4 Summary.................................................................................................................43
3.2 Bi-directional adaptive body bias ..................................................................................43
3.3 Body bias circuit impedance requirement......................................................................50
Chapter 4 Within-die Threshold Voltage Variation and Leakage Power...............57
4.1 Estimation of chip leakage current.................................................................................57
4.1.1 Present leakage current estimation techniques ........................................................57
4.1.2 Leakage current estimation including within-die variation.....................................58
4.1.3 Measurement results................................................................................................61
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4.2 Leakagereduction..........................................................................................................62
4.2.1 Model for stack effect factor ...................................................................................64
4.2.2 Leakage reduction using forced-stacks....................................................................69
4.2.3 Stack effect vs. channel length increase ..................................................................71
4.2.4 Case study and summary.........................................................................................73
Chapter 5 Neighborhood Threshold Voltage Variation............................................75
5.1 Voltage biasing..............................................................................................................76
5.1.1 Application of voltage bias to low-voltage sense-amplifiers ..................................77
5.2 Currentbiasing...............................................................................................................81
5.2.1 Basic iso-current biasing and two-phase clock generation......................................81
5.2.2 Process insensitive current biasing..........................................................................84
5.2.2.1 Process insensitive constant current generation..............................................85
Chapter 6 Conclusion...................................................................................................91
6.1Contributions..................................................................................................................91
6.2 Suggestions for future work...........................................................................................93 |
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