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Chapter 1 Introduction ................................................................................................21
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 Chapter 2 Background.................................................................................................25
 2.1 Technology scaling and threshold voltage variation......................................................25
 2.2 Threshold voltage variation categories ..........................................................................29
 Chapter 3 Die-to-die and Within-die Threshold Voltage Variations.......................33
 3.1 Adaptive body bias........................................................................................................33
 3.1.1 Adaptive body bias and short channel effect (SCE)................................................34
 3.1.2 Scaling of required body bias and SCE increase.....................................................33
 3.1.3 Impact on within-die threshold voltage variation....................................................41
 3.1.4 Summary.................................................................................................................43
 3.2 Bi-directional adaptive body bias ..................................................................................43
 3.3 Body bias circuit impedance requirement......................................................................50
 Chapter 4 Within-die Threshold Voltage Variation and Leakage Power...............57
 4.1 Estimation of chip leakage current.................................................................................57
 4.1.1 Present leakage current estimation techniques ........................................................57
 4.1.2 Leakage current estimation including within-die variation.....................................58
 4.1.3 Measurement results................................................................................................61
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 4.2 Leakagereduction..........................................................................................................62
 4.2.1 Model for stack effect factor ...................................................................................64
 4.2.2 Leakage reduction using forced-stacks....................................................................69
 4.2.3 Stack effect vs. channel length increase ..................................................................71
 4.2.4 Case study and summary.........................................................................................73
 Chapter 5 Neighborhood Threshold Voltage Variation............................................75
 5.1 Voltage biasing..............................................................................................................76
 5.1.1 Application of voltage bias to low-voltage sense-amplifiers ..................................77
 5.2 Currentbiasing...............................................................................................................81
 5.2.1 Basic iso-current biasing and two-phase clock generation......................................81
 5.2.2 Process insensitive current biasing..........................................................................84
 5.2.2.1 Process insensitive constant current generation..............................................85
 Chapter 6 Conclusion...................................................................................................91
 6.1Contributions..................................................................................................................91
 6.2 Suggestions for future work...........................................................................................93
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