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[size=120%]Understanding Modern Transistors and Diodes
By David L. Pulfrey
- Publisher: Cambridge University Press
- Number Of Pages: 354
- Publication Date: 2010-03-31
- ISBN-10 / ASIN: 0521514606
- ISBN-13 / EAN: 9780521514606
Product Description:
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features:
• Rigorous theoretical treatment combined with practical detail
• A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation
• Covers MOSFETS, HBTs and HJFETS
• Uses the PSP model for MOSFETS
• Rigorous treatment of device capacitance
• Describes the operation of modern, high-performance transistors and diodes
• Evaluates the suitability of various transistor types and diodes for specific modern applications
• Covers solar cells and LEDs and their potential impact on energy generation and reduction
• Includes a chapter on nanotransistors to prepare students and professionals for the future
• Provides results of detailed numerical simulations to compare with analytical solutions
• End-of-chapter exercises
• Online lecture slides for undergraduate and graduate courses
2009 IEEE Electron Devices Society Education Award
"For contributions to the teaching of semiconductor devices at both the undergraduate and graduate levels"
2009 Teaching Award for Excellence in Engineering and Geoscience Education
"From the Association of Professional Engineers and Geoscientists of British Columbia." |
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发表于 2010-11-23 13:07:15
