RF版图中NT_N层对衬底电导率的影响？

liuzexue

参看文献【1】的Fig.10。CMOS工艺通常用的轻掺杂硅衬底电阻率在10Ωcm左右（这是带有Native层的衬底的电阻率）。如果不带有Native层，则电阻率会在0.1-1Ωcm左右。

【1】S. Hazenboom, T. S. Fiez and K. Mayaram, "A comparison of substrate noise coupling in lightly and heavily doped CMOS processes for 2.4-GHz LNAs," in IEEE Journal of Solid-State Circuits, vol. 41, no. 3, pp. 574-587, March 2006, doi: 10.1109/JSSC.2006.869790.

doghead

liuzexue 发表于 2024-12-31 19:43
参看文献【1】的Fig.10。CMOS工艺通常用的轻掺杂硅衬底电阻率在10Ωcm左右（这是带有Native层的衬底的电阻 ...

感谢分享

cppvalor

JoyShockley 发表于 2024-12-6 21:09
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9502919

加完后在10ohm*cm；不加会比这个小 ...

太强了