SGMOSFET = Surrounding Gate Transistor 不就 gate-all-around (GAA) FET, A gate-all-around(GAA) FET, abbreviated GAAFET, and also known as a surrounding-gate transistor(SGT), is similar in concept to a FinFET except that the gate materialsurrounds the channel region on all sides. Depending on design,gate-all-around FETs can have two or four effective gates.
25nm ~3nm FINFET 3nm 下 才出现 GAA Nanowire GAA Nanosheet MBCFET 25nm 上是 bulk CMOS , 当 25nm 下改 鳍式电晶体(FinFET)的立体架构。该制程的问世就是因为平面的微缩技术在25nm以下遇到瓶颈, 然而制程发展到3nm将会是一个重要的技术分界点
为什么3nm制程如此关键,最主要的原因就是当前的微缩制程走到3nm,将会面临新的物理极限,除非改用新的结构,否则摩尔定律就很难再维持下去。
这项突破也就是GAAFET(Gate-All-Around,GAA) https://www.wpgdadatong.com/tw/blog/detail/42112
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