The source region is wider than the drain for power MOS Tr

teradyne · 发表于 2007-5-31 20:48:59

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30 May 2007 11:04 The source region is wider than the drain for power MOS Tr

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Hi,
I found for some MOS Tr at output power stage, the source diffusion region is wider than that of the drain. E.g., I ever saw for a class d power amp output stage, the width of source is ~2.1um while the drain is 1.1um.

Would anyone pls. tell me why?

langtaosha · 发表于 2007-6-16 22:31:06

ballast resistor设计？！对于输出PAD的功率管通常是ESD设计

sunil4u · 发表于 2016-5-20 21:48:42

the source capacitance doesn't effect the performance for power transistor.

The source region is wider than the drain for power MOS Tr

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是ESD设计或者是镇流电阻

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