Warning: Duplicate subckt definition "MBNOD12DDP2" at line 2495 in file "HMG_IOBUF_CZ6_LVS_V1.2.spi"
Warning: Duplicate subckt definition "MBNOD12DP1" at line 2541 in file "HMG_IOBUF_CZ6_LVS_V1.2.spi"
Warning: Duplicate subckt definition "MBNOD12DP2" at line 2587 in file "HMG_IOBUF_CZ6_LVS_V1.2.spi"
Warning: Duplicate pin definition "GND" at line 3654 in file "HMG_IOBUF_CZ6_LVS_V1.2.spi"
* = Number of objects in layout different from number in source.
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INFORMATION AND WARNINGS
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o Statistics:
13 passthrough source nets were deleted.
84076 layout mos transistors were reduced to 10524.
73552 mos transistors were deleted by parallel reduction.
82 source mos transistors were reduced to 17.
65 mos transistors were deleted by parallel reduction.
4 series layout resistors were reduced to 2. 2 connecting nets were deleted.
2 series source resistors were reduced to 1. 1 connecting net was deleted.
12 parallel layout diodes were reduced to 6.
1 unused layout mos transistor was deleted.
1 unused source mos transistor was deleted.
2 unused layout resistors were deleted.
4 unused source resistors were deleted.
2 layout nets had all their pins removed and were deleted.
5 source nets had all their pins removed and were deleted.