A switched capacitor DC DC converter for LDO replacement in 45nm CMOS

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Title:	A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS
Author:	Ramadass, Yogesh; Fayed, Ayman; Haroun, Baher; Chandrakasan, Anantha P.
Department:	Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Publisher:	Institute of Electrical and Electronic Engineers
Issue Date:	2010-02
Abstract:	A completely on-chip switched-capacitor DC-DC converter that occupies 0.16 mm2 [mm superscript 2] is implemented in a 45 nm CMOS process. The converter delivers 8 mA output current while maintaining load voltages from 0.8 to 1 V from a 1.8 V input supply. A digital capacitive modulation scheme is employed to maintain the converter efficiency between 50 to 70% over a wide range of load current levels.
Other Identifiers:	INSPEC Accession Number: 11204884
ISBN:	978-1-4244-6033-5
ISSN:	0193-6530
Citation:	Ramadass, Y. et al. “A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS.” Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. 2010. 208-209. © 2010, IEEE
Version:	Final published version
Terms of Use:	Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Journal:	IEEE International Solid-State Circuits Conference.. Digest of technical papers

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