| Title: | A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS |
| Author: | Ramadass, Yogesh; Fayed, Ayman; Haroun, Baher; Chandrakasan, Anantha P. |
| Department: | Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| Publisher: | Institute of Electrical and Electronic Engineers |
| Issue Date: | 2010-02 |
| Abstract: | A completely on-chip switched-capacitor DC-DC converter that occupies 0.16 mm2 [mm superscript 2] is implemented in a 45 nm CMOS process. The converter delivers 8 mA output current while maintaining load voltages from 0.8 to 1 V from a 1.8 V input supply. A digital capacitive modulation scheme is employed to maintain the converter efficiency between 50 to 70% over a wide range of load current levels. |
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| Other Identifiers: | INSPEC Accession Number: 11204884 |
| ISBN: | 978-1-4244-6033-5 |
| ISSN: | 0193-6530 |
| Citation: | Ramadass, Y. et al. “A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS.” Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. 2010. 208-209. © 2010, IEEE |
| Version: | Final published version |
| Terms of Use: | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
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| Journal: | IEEE International Solid-State Circuits Conference.. Digest of technical papers |
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