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[资料] Which is the Best Dual-Port SRAM in 45-nm Process Technology?

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发表于 2011-2-3 18:22:12 | 显示全部楼层 |阅读模式

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Abstract— This paper compares readout powers and operating
frequencies among dual-port SRAMs: an 8T SRAM, 10T
single-end SRAM, and 10T differential SRAM. The conventional
8T SRAM has the least transistor count, and is the most area
efficient. However, the readout power becomes large and the
cycle time increases due to peripheral circuits. The 10T
single-end SRAM is our proposed SRAM, in which a dedicated
inverter and transmission gate are appended as a single-end read
port. The readout power of the 10T single-end SRAM is reduced
by 75% and the operating frequency is increased by 95%, over
the 8T SRAM. On the other hand the 10T differential SRAM can
operate fastest, because its small differential voltage of 50 mV
achieves the high-speed operation. In terms of the power
efficiency, however, the sense amplifier and precharge circuits
lead to the power overhead. As a result, the 10T single-end
SRAM always consumes lowest readout power compared to the
8T and the 10T differential SRAM.
ICICDT08DPSRAM.pdf (3.92 MB, 下载次数: 169 )
发表于 2011-2-5 10:48:18 | 显示全部楼层
谢谢啊
发表于 2011-2-6 22:35:47 | 显示全部楼层
good reference for SRAM
发表于 2011-2-11 19:22:34 | 显示全部楼层
thanks for sharing
发表于 2011-3-19 16:49:17 | 显示全部楼层
很好的參考資料,謝謝。
发表于 2011-3-20 11:26:02 | 显示全部楼层
好资料 谢谢分享
发表于 2011-4-8 16:41:50 | 显示全部楼层
have a look~
发表于 2011-4-8 16:49:38 | 显示全部楼层
謝謝你~~分享這個好東西
发表于 2011-11-24 18:19:21 | 显示全部楼层
谢谢楼主的共享 下来看看
发表于 2014-10-23 13:56:54 | 显示全部楼层
for sram !
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