Physics of Quantum Well Devices

xhwubai

CONTENTS
Preface
Acknowledgments
1. INTRODUCTION
1.1. Quantum Well Devices
1.2. Scope of the Book
2. HETEROSTRUCTURE GROWTH
2.1. Molecular Beam Epitaxy
2.2. Metalorganic Chemical Vapour Deposition
2.3. Chemical Beam Epitaxy
2.4. Other Techniques
2.4.1. HOT-WALL EPITAXY
2.4.2. GS-MBE
2.4.3. LASER-ASSISTED MBE
2.4.4. ATOMIC LAYER EPITAXY
2.4.5. RF-ECR MBE
2.5. 1D Structures
2.5.1. ETCHING AND REGROWTH
2.5.2. GROWTH ON VICINAL SUBSTRATES
2.5.3. INTERDIFFUSION OF GROUP-III ELEMENTS
2.5.4 GROWTH ON PATTERNED NON-PLANAR SUBSTRATES
2.6. 0D Structures
2.6.1. ETCHING OR ION MILLING
2.6.2. SELECTIVE ETCH TECHNIQUE
2.6.3. SELF-ORGANIZED GROWTH
2.7. Conclusion
3. BAND OFFSET
3.1. Types of Heterostructures
3.2. Empirical rules
3.2.1. ELECTRON AFFINITY RULE
3.2.2. COMMON-ANION RULE
3.3. Theoretical Methods SPECTROSCOPY (XPS)
3.3.1. TERSOFF METHOD
3.3.2. VAN DE WALLE-MARTIN METHOD
3.4. Experimental Methods
3.4.1. ABSORPTION MEASUREMENT
3.4.2. PHOTOLUMINESCENCE MEASUREMENT
3.4.3. X-RAY CORE LEVEL PHOTOEMISSION
3.5. Values of Band Offset
3.6. Conclusion
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4. ELECTRON STATES
4.1. Effective-mass Approximation
4.1.1. EFFECTIVE-MASS APPROXIMATION FOR DEGENERATE
4.1.2. ENVELOPE-FUNCTION EQUATION FOR ELECTRONS
4.1.3. ENVELOPE'-FUNCTION EQUATION FOR HOLES
4.1.4. ENVELOPE-FUNCTION EQUATION FOR HIGH-ENERGY
4.1.5. BOUNDARY CONDITIONS
4.2. Energy Levels of Electrons
4.2.1. QUANTUM WELL
4.2.2. SUPERLATTICE
4.2.3. SINGLE HETEROJUNCTION
4.2.4. QUANTUM WIRES AND QUANTUM DOTS
4.3. Energy Levels of Holes
4.4. Energy Levels in Strained-layer Wells
4.4.1. EFFECT OF STRAIN ON THE CONDUCTION BAND
4.4.2. EFFECT OF STRAIN ON THE VALENCE BAND
4.5. Conclusion
5. OPTICAL INTERACTOION PHENOMENA
5.1. Optical Interaction in Bulk Materials
5.2. Interaction in Quantum Wells
5.2.1. INTERBAND TRANSITIONS
5.2.2. INTERSUBBAND ABSORPTION
5.3. Excitons
5.3.1. EXCITED-STATE WAVE FUNCTION
5.3.2. EXCITONIC WAVE FUNCTIONS
5.3.3. EXCITONIC OPTICAL INTERACTION MATRIX ELEMENT
5.3.4. EXCITONS IN QUANTUM WELLS 97
5.3.5. EXCITONIC OPTICAL MATRIX ELEMENT FOR QUANTUM WELLS 99
5.4. Bound and Localized Excitons 101
5.5. Absorption 102
5.5.1. INTERBAND ADSORPTION 104
5.5.2. EXCITONIC ABSORPTION 107
5.5.3. ABSORPTION SPECTRUM 109
5.5.4. INTERSUBBAND ABSORPTION 112
5.6. Quantum-Confined Stark Effect 114
5.7. Nonlinear Effects 122
5.7.1. NONRESONANT NONLINEARITY 123
5.7.2. RESONANT NONLINEARITY
5.8. Photoluminescence
5.9. Photoluminescence Spectrum
5.10. Conclusion
6. TRANSPORT PROPERTIES 139
6.1. Scattering Processes for 2DEG 140
6.2. Matrix Elements for 2DEG
6.3. Form Factor 145
6.4. Screening by 2DEG 146
6.5. Collision Integral for 2DEG 148
6.6. Scattering Rate for 2DEG 149
6.7. Solution of the Transport Equation for 2DEG 152
6.8. Mobility 155
6.8.1. ELECTRON MOBILITY IN AlGaAs/GaAs AND AlGaAs/InGaAs
SINGLE HETEROJUNCTION AND InP/GaInAs QW’s
6.8.2. ELECTRON MOBILITY IN InGaP/GaAs QW’s
6.8.3. ELECTRON MOBILITY IN AlGaN/GaN QW’s 160
6.8.4. GENERALIZED EXPRESSION FOR MOBILITY 160
6.9. High-field Velocity OF 2DEG
6.9.1. THEORY 162
6.9.2. EXPERIMENTAL RESULTS 165
6.10. Scattering-induced Broadening of Photoluminescence Spectrum 166
6.11. Ballistic Transport 171

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7. HIGH ELECTRON MOBILITY TRANSISTOR 173
7.1. Structure and Principle of Operation 173
7.2. Potential Distribution and
7.3. Current-Voltage Characteristic
7.4. Experimental Results
7.5. Current Researches on HEMT’s
Accumulated Charge Density
7.5.1. TEMPERATURE DEPENDENCE OF CHARACTERISTICS
7.5.2. THEORETICAL MODELS AND SIMULATORS
7.5.4. CONTROL OF HEMT’s BY LIGHT
7.5.3. HIGH-POWER MICROWAVE HEMT’S
7.6. Conclusion

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8. RESONANT TUNNELING DIODE
8.1. Introduction
8.2. Tunneling Characteristic
8.3. Current-Voltage Characteristic
8.4. Experiments
8.5. Applications
9. QUANTUM WELL LASER
9.1. Operating Principle
9.2. Laser Equation
9.3. Operating Characteristics
9.4. Threshold Current
9.4.1. CONFINEMENT FACTOR
9.4.2. GAIN
9.4.3. ESTIMATION OF THRESHOLD CURRENT
9.4.4. EQUIVALENT CIRCUIT MODEL
9.5. Experimental Results
9.5.1. GaAs/AlGaAs QWL
9.5.2. InGaAsP QWL
9.5.3. STRAINED-LAYER LASERS
9.5.4. VISIBLE MQWL
9.5.5. SURFACE-EMITTING LASERS
9.5.6. QUANTUM WIRE LASER
9.5.7. QUANTUM DOT LASER
9.6. Conclusion
10. QUANTUM WELL DETECTOR, MODULATOR
10.1. Quantum Well Detector AND SWITCH
10.1.1. PRINCIPLE OF OPERATION
10.1.2. EXPERIMENTAL RESULTS
10.1.3. QUANTUM DETECTOR SYSTEMS UNDER
EXPERIMENTATION
10.2. Quantum Well Modulator
10.2.1. TRANSVERSE TRANSMISSION MODULATOR
10.2.2. WAVEGUIDE MODULATOR
10.2.3. FABRY-PEROT MODULATOR
10.3. Quantum Well Switch
10.3.1. R-SEED
10.3.2. D-SEED
10.3.3. S-SEED
10.4. Optical Bistable Device(OBD)
10.4.1. ABSORPTION-BASED OBD
10.4.2. DISPERSION-BASED
10.5. Waveguide all-optic switch
10.6. Conclusion
References
Appendix
Index

wufuwei

good book,thank you

wufuwei

花了好多钱啊

jansenchen

3# xhwubai

wangl055

谢谢楼主！

grhuizl

好书 下了 谢了

jasonarmwang

Thank you for sharing the material