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[size=89%]1.Well implant ions would scatter at well PR edge, bounce into the active region and thus increase device threshold voltage.
[size=89%]2.This effect is process dependent. It is related to the oxide thickness, the channel doping profile of the devices, well implant dose density and energy.
It could be also slightly W and L dependent.
[size=89%]3.In addition to Vth, well proximity effect might also change body effect and equivalent mobility more or less.
[size=89%]4.Therefore, it is better to keep this model in SPICE model cards and simulators. What LPE tools need to do is to pass one more instance parameter, SC (average distance between MOS and well edge) , to the simulator as proposed in the following slides. |
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