谁有这篇文章_Novel high-voltage, high-side and low-side power devices

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Novel high-voltage, high-side and low-side power devices

Qiao Ming~+,Fang Jian,Li Zhaoji,and Zhang Bo(College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610054,China)   

        

A coupled level shift structure is designed and implemented.Compared with conventional S level shift structures,the two high electric fields of an LDMOS and a high voltage junction termination(HVJT) introduced by a high voltage interconnection(HVI) are avoided.The HV level shift and isolation of the high side and low side are directly coupled,so the chip size is reduced.The isolated resistor in the C level shift structure can be increased by a JFET consisting of a Pwell,Nepi,and P-sub,and the short of a poly field plate(PFP) in the LDMOS and HVJT is avoided by use of a metal field plate(MFP).Using HV single poly single metal(SPSM) CMOS DMOS(CD) technology developed by us,we experiment on a 1000V 3-phase power MOS gate driver circuit with C level shift structure successfully.The experimental results show that the maximal breakdown voltage of the C level shift structure is 1040V,which is 62.5% higher than that of a conventional S structure.The 1000V HVIC can be used for the HV application of AC220V and AC380V.