在线咨询
eetop公众号 创芯大讲堂 创芯人才网
切换到宽版

EETOP 创芯网论坛 (原名:电子顶级开发网)

手机号码,快捷登录

手机号码,快捷登录

找回密码

  登录   注册  

快捷导航
搜帖子
查看: 8685|回复: 2

Some problem with TSMC18rf inductor device

[复制链接]
发表于 2008-9-19 15:01:20 | 显示全部楼层 |阅读模式

马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。

您需要 登录 才可以下载或查看,没有账号?注册

x
Our designing environment is caliber v2006.1_25.26 embedded into Cadence IC5.10.41.169. And the PDK is tsmc181p4mmmrfpdk_v13.Now we are suffering from some problems with TSMC18RF PDK and the Calibre LVS.


The schematics and the layout can be created correctly, and the pre-simulations can also be taken. The layout can pass the Calibre DRC check smoothly. But it seems that the Calibre LVS doesn't work.
The first problem is about the NMOS_RF and PMOS_RF device identifications. the RFMOS with DNW and guard ring is used in our design, and the dummy poly on each side of the RFMOS layout is created automatically or manually. The RFMOS can be identified by Calibre LVS correctly on this condition. But the dummy poly and the active region should not be floated. When we connect the dummy poly to the right voltage level(PMOS_RF to VDD, NMOS_RF to GND), the problem emerges. Calibre LVS stops with errors tell that "Corresponding cells could not be
identified. Nothing in layout.". And the Extraction Report tells that "
<<
WARNING: BAD DEVICE on layer nrgate_4t_nthin at location (-98.41,50.81) in cell Example

(Too many pins).

Found 6 interaction(s):

Pin on layer d_tndiff, net 5 at location (-95.63,52.31)

Pin on layer poly, net 3 at location (-97.68,52.31)

Pin on layer s_tndiff, net 3 at location (-98.41,52.31)

Pin on layer psub, net 1 at location (-98.41,52.31)

Auxiliary shape on layer nrgate_rf4t at location (-97.68,52.31)

Pin on layer s_tndiff, net 4 at location (-96.78,52.31) (extra pin)

Possible Element Names: nmos_rf
>>
Pins are added to the design. And we also refer to the <<RF_devices_guard_ring_drawn_guideline.pdf>> manual. But it seems the problem is still there.
The second problem is about the IND_SYM_CT device. DRC rules tell us that the top level metal should be departed from the inductor metal at least 50um. So we follow it to connect the plus and minus line of inductor device out with top layer metal. but the ind_sym_ct device can not be detected by calibre LVS. the report tells that "Corresponding cells could not be identified. Nothing in layout." Then we put vias on the inductor plus and minus line to steer the signal out through the metal underneath. But the ind_sym_ct device can not be detected by calibre LVS
either. So, how shall we connect the output terminal of the IND_SYM_CT device to steer the signal out.


Any reply will be greatly appreciated.
发表于 2010-3-5 18:24:41 | 显示全部楼层
1# zhengwei_jimmy
发表于 2010-12-4 20:38:03 | 显示全部楼层
very good article
您需要登录后才可以回帖 登录 | 注册

本版积分规则

关闭

站长推荐 上一条 /2 下一条


小黑屋| 手机版| 关于我们| 联系我们| 在线咨询| 隐私声明| EETOP 创芯网
( 京ICP备:10050787号 京公网安备:11010502037710 )

GMT+8, 2024-12-19 04:19 , Processed in 0.019766 second(s), 9 queries , Gzip On, Redis On.

eetop公众号 创芯大讲堂 创芯人才网
快速回复 返回顶部 返回列表