专利dual gate oxide 提到 3类 mos 疑问

andy2000a

专利US20100308415A1 提到 3类 mos 疑问

dual gate oxide CMOS technology providingthree types of transistor; a thin oxide device, a thick oxide device, and athin oxide device using the implant type of the thick oxide device for providingimproved analogue performance.

dual gate oxide  提到 可 3类 mos

thin oxide device using the implant type of the thick oxide device for providingimproved analogue performance.

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这是指甚?  

这thingate和 thick gate 是低压mos跟power 工艺的高压mos ??

esbwong

thin gate + LV drain/source implants
thick gate + HV implants
thin gate + HV implants

andy2000a

   

esbwong 发表于 2023-6-16 13:43
thin gate + LV drain/source implants
thick gate + HV implants
thin gate + HV implants

thank you .

thin gate + LV drain/source implants
thick gate + HV implants
thin gate + HV implants  =>  vds 那source/drain 耐高压 是多高?   12v  or 24v ?

工艺 low volt mos 工艺 不是有 over driver ?  是这一类吗? 5V od 6V

高压工艺有种hv gate mv mos 叫 LHL , MHM

LHL =  hvthick gate + LV drain/source

MHM = hv thick gate + Hv drain /source