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This reference text discusses the conduction mechanism, structure construction, operation, performance evaluation, and applications of nanoscale semiconductor materials and devices in very large-scale integration (VLSI) circuit design. The text explains nanomaterials and devices and analyzes its design parameters to meet the sub-nano-regime challenges for complementary metal–oxide–semiconductor devices. It discusses important topics, including memory design and testing, fn feld-effect transistor (FinFET), tunneling feld-effect transistor for sensor design, carbon nanotube feld-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano- devices based on low-power-circuit design, and microelectromechanical systems design. The book • discusses nanoscale semiconductor materials, device models, and circuit design. • covers nanoscale semiconductor device structures and modeling. • discusses novel nano-semiconductor devices such as FinFET, CNTFET, and nanowire. • covers power dissipation and reduction techniques. Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano-devices based on a low-power circuit design, nanoscale devices based on digital VLSI circuits, and novel devices based on an analog VLSI circuit design.
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发表于 2022-10-31 23:06:44
