Fundamentals of Modern VLSI Devices,3rd edition @2022

2046

A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent develop- ments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modeling of MOSFETs, short-channel FinFETS, and sym- metric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Fundamentals of Modern VLSI Devices (Yuan Taur, Tak H. Ning).pdf (23.62 MB, 下载次数: 512 )

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Fundamentals of Modern VLSI Devices,3rd edition @2022
现代超大规模集成电路器件基础，第三版，2022

本书第三版是一部被广泛采用经典教材的彻底更新版，其对实用晶体管设计与课室教学堪称优秀之作。本书涉及各种各样的最新进展、国际上的著名作者们详尽讨论了现代超大规模集成电路器件的基本特性与设计，也讨论了影响性能的各种因素。本书包括有约25%的新材料，其涉猎范围的扩展包括有High-k栅极电介质（high-k gate dielectrics），金属栅技术（metal gate technology），应变硅迁移率（strained silicon mobility），MOSFETs的非GCA（渐进沟道近似)模拟，短沟道鳍式场效晶体管（short-channel FinFETS），硅绝缘体对称横向双极晶体管（symmetric lateral bipolar transistors on SOI）。为了将各附录的内容融入到主课文里，本书已对各章节作了重新编辑，以便学员们有顺畅的学习体验，并且包括了很多章节结尾的课后练习（增加了30%），可以让学员们接触到真实的各种问题并测试学员们的理解。本书对选修先进半导体器件课程的高年级本科生、研究生与半导体产业内从事硅器件的专业人士，都是一本极好的教科书。