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求大家帮我看看hspice仿真出现下列错误**error** model name p in the element 0:m1 is not defined.
我调用的.sp
.lib "E:/HSPICE/synopsys/smic180/l018_v2p8.lib" TT
.include "E:/HSPICE/synopsys/smic180/smic18.cdl"
X1 1 x INVX1
Cl 1 GND Cout
.subckt INVX1 Y A
M0 Y A GND GND N l=0.18u w=0.6u
M1 VDD A Y VDD P l=0.18u w=0.9u
.ends INVX1
*.SCALE meter
.GLOBAL GND GND VDD
这个是库文件
.subckt n18_ckt_rf 1 2 3 4 lr=l wr=w nf=finger
* scalable unit parameter
* euqivalent circuit saclable parameter
.param
+Rg_rf = 'max((1542.7*lr*1e6+165.64)*pwr(wr*1e6,-0.9019*lr*1e6-0.5975)*pwr(nf,-0.9912*pwr(wr*1e6,-0.1348)), 1e-3)'
+Rsub1_rf = 'max(341.64*pwr(nf,-0.5321), 1e-3)'
+Rsub2_rf = 'max(341.64*pwr(nf,-0.5321), 1e-3)'
+Cgd_rf = 'max(((8.85e-16*lr*lr*1e12-4.83e-16*lr*1e6+3.92e-16)*wr*1e6+2.95e-16)*nf+3.19e-16*pwr(wr*1e6,0.402), 1e-18)'
+Cgs_rf = 'max(((4.82e-16*lr*1e6+9.58e-17)*pwr(wr*1e6,2.3513*lr*1e6-1.3178))*nf+1.34e-15*pwr(wr*1e6,-0.763), 1e-18)'
+Cds_rf = 'max(((3.37e-17*pwr(lr*1e6,-1.38))*wr*1e6+1.89e-16)*nf+(-1.21e-14*lr*lr*1e12+9.83e-15*lr*1e6-9.86e-16)*pwr(wr*1e6,0.505), 1e-18)'
+Djdb_AREA_rf = '(nf/2*(0.8-2*0.07)*wr*1e6)*1e-12'
+Djdb_PJ_rf = '(-0.048*log(wr*1e6)+1.1121)*(nf*wr)'
+Djsb_AREA_rf = '((nf/2-1)*(0.8-2*0.07)*wr*1e6+(0.8-0.07)*wr*1e6*2)*1e-12'
+Djsb_PJ_rf = '(-0.0567*log(wr*1e6)+1.1608)*(nf*wr)'
+Rdc_n18 = 'max(17*(1/(pwr(wr*1e6,0.9))),1e-03)'
+Rsc_n18 = 'max(17*(1/(pwr(wr*1e6,0.9))),1e-03)'
+Cgdo_n18 = 'max((0+dcgdo_n18_rf), 0)'
+Cgso_n18 = 'max((0+dcgso_n18_rf), 0)'
*****************************************
Lgate 2 20 1p
Rgate 20 21 Rg_rf
Cgd_ext 20 11 Cgd_rf
Cgs_ext 20 31 Cgs_rf
Cds_ext 15 31 Cds_rf
Rds 11 15 0.01
Ldrain 1 11 1p
Lsource 3 31 1p
*****************************************
Djdb 12 11
+ ndio18_rf
+ AREA = Djdb_AREA_rf
+ PJ = Djdb_PJ_rf
***
Djsb 32 31
+ ndio18_rf
+ AREA = Djsb_AREA_rf
+ PJ = Djsb_PJ_rf
*****************************************
Rsub1 41 4 Rsub1_rf
Rsub2 41 12 Rsub2_rf
Rsub3 41 32 12000
*
* --------- ideal mos transistor ----------------------
MAIN 11 21 31 41 n L=lr W=wr m=nf AD = 0 AS = 0 PD = 0 PS = 0
* MOS Model
.MODEL n NMOS
+LEVEL = 49
*
* GENERAL PARAMETERS
*
+CALCACM = 1
+LMIN = 1.6E-7 LMAX = 5.2E-7 WMIN = 4.8E-7
+WMAX = 1.002E-5 TNOM = 25.0 VERSION = 3.2
+TOX = '3.87E-09+DTOX_N18_RF' TOXM = 3.87E-09 XJ = 1.6000000E-07
+NCH = 3.8694000E+17 LLN = 1.1205959 LWN = 0.9200000
+WLN = 1.0599999 WWN = 0.8768474 LINT = 1.5757085E-08
+LL = 2.6352781E-16 LW = -2.2625584E-16 LWL = -2.0576711E-22
+WINT = -1.4450482E-09 WL = -2.3664573E-16 WW = -3.6409690E-14
+WWL = -4.0000000E-21 MOBMOD = 1 BINUNIT = 2
+XL = '1.8E-8+DXL_N18_RF' XW = '0.00+DXW_N18_RF' DWG = -5.9600000E-09
+DWB = 4.5000000E-09
* DIODE PARAMETERS
+ACM = 12 LDIF = 7.00E-08 HDIF = 2.00E-07
+RSH = 7.08 RD = 0 RS = 0
+RSC = 'Rsc_n18' RDC = 'Rdc_n18'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+VTH0 = '0.39+DVTH_N18_RF' WVTH0 = -2.9709472E-08 PVTH0 = '5.0000000E-16+DPVTH0_N18_RF'
+K1 = 0.6801043 WK1 = -2.4896840E-08 PK1 = 1.3000000E-15
+K2 = -4.9977830E-02 K3 = 10.0000000 DVT0 = 1.3000000
+DVT1 = 0.5771635 DVT2 = -0.1717554 DVT0W = 0.00
+DVT1W = 0.00 DVT2W = 0.00 NLX = 7.5451030E-08
+W0 = 5.5820150E-07 K3B = -3.0000000
*
* MOBILITY PARAMETERS
*
+VSAT = 8.2500000E+04 PVSAT = -8.3000000E-10 UA = -1.0300000E-09
+LUA = 7.7349790E-19 PUA = -1.0000000E-24 UB = 2.3666682E-18
+UC = 1.2000000E-10 PUC = 1.5000000E-24 RDSW = 55.5497200
+PRWB = -0.2400000 PRWG = 0.4000000 WR = 1.0000000
+U0 = 3.4000000E-02 LU0 = 2.3057663E-11 WU0 = -3.1009695E-09
+A0 = 0.8300000 KETA = -3.0000000E-03 LKETA = -1.7000000E-09
+A1 = 0.00 A2 = 0.9900000 AGS = 0.3200000
+B0 = 6.0000000E-08 B1 = 0.00
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+VOFF = -0.1030000 LVOFF = -3.3000000E-09 NFACTOR = 1.2500000
+LNFACTOR = 4.5000000E-08 CIT = 0.00 CDSC = 0.00
+CDSCB = 0.00 CDSCD = 1.0000000E-04 ETA0 = 2.8000001E-02
+ETAB = -2.7000001E-02 DSUB = 0.4000000
*
* ROUT PARAMETERS
*
+PCLM = 1.2000000 PPCLM = 2.9999999E-15 PDIBLC1 = 2.5000000E-02
+PDIBLC2 = 3.8000000E-03 PPDIBLC2 = 2.7000001E-16 PDIBLCB = 0.00
+DROUT = 0.5600000 PSCBE1 = 3.4500000E+08 PSCBE2 = 1.0000000E-06
+PVAG = 0.00 DELTA = 1.0000000E-02 ALPHA0 = 1.7753978E-08
+ALPHA1 = 0.1764000 LALPHA1 = 7.6250000E-09 BETA0 = 11.1683940
*
* TEMPERATURE EFFECTS PARAMETERS
*
+KT1 = -0.2572866 KT2 = -4.0000000E-02 AT = 3.7000000E+04
+PAT = -7.5000000E-10 UTE = -1.5500000 UA1 = 1.7600000E-09
+LUA1 = 6.0000000E-18 WUA1 = -1.1000000E-16 PUA1 = -5.0000000E-25
+UB1 = -2.4000000E-18 UC1 = -1.0000000E-10 LUC1 = 1.6999999E-17
+PUC1 = -3.0000000E-24 KT1L = -1.0000000E-09 PRT = -55.0000000
*
* CAPACITANCE PARAMETERS
*
+CJ = 0 MJ = 0.346 PB = 0.7
+CJSW = 0 MJSW = 0.538 PBSW = 1
+CJSWG = 0 MJSWG = 0.538 PBSWG = 1
+TCJ = 8.42E-04 TCJSW = 6.69E-04 TCJSWG = 6.69E-04
+TPB = 1.47E-03 TPBSW = 8.68E-04 TPBSWG = 8.68E-04
+JS = 3.52E-07 JSW = 3.0E-13 NJ = 1.0392
+XTI = 3.25 NQSMOD = 0 ELM = 5
+CGDO = 'Cgdo_n18' CGSO = 'Cgso_n18' TLEVC = 1
+CAPMOD = 3 XPART = 1 CF = 0.00
+ACDE = 0.64 MOIN = 24 NOFF = 1.2025
+DLC = 8.5E-09 DWC = 4.5E-08
+NLEV = 3 AF = 0.85 KF = 1.5E-24
* Diode Model
.model ndio18_rf D
*
+LEVEL = 3 JS = 3.52E-07 JSW = 1E-15
+N = 1.0233 RS = 8.89E-09 IK = 1.52E+05
+IKR = 2.78E+05 BV = 11.0 IBV = 277.78
+TRS = 1.51E-03 EG = 1.16 TREF = 25.0
+XTI = 3.0 CJ = 0.000968 MJ = 0.346
+PB = 0.7 CJSW = 4.18E-10 MJSW = 0.538
+PHP = 1 CTA = 0.000842 CTP = 0.000669
+TPB = 0.00147 TPHP = 0.000868 TLEV = 1
+TLEVC = 1 AREA = 3.60E-09 PJ = 2.4E-04
+FC = 0 FCS = 0
.ends n18_ckt_rf |
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