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論文名稱 Circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm CMOS process
指導教授 Ming-Dou Ker
期刊 J.-S. Chen and Ming-Dou Ker, Circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm CMOS process, Proc. of 2006 IEEE International Reliability Physics Symposium (IRPS), San Jose, California, USA, Mar. 26-30, 2006, pp.705-706
摘要 The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance. |
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