sub-40nm LDE(Layout Dependent effect)效应分析

sunxifu · 发表于 2019-7-1 10:22:05

多谢楼一~

yyzz950701 · 发表于 2019-7-4 14:17:57

谢谢分享

microuser · 发表于 2019-7-5 10:12:18

谢谢分享！！！

simufox · 发表于 2019-7-5 13:13:54

Xie Xie

hijackerhaha · 发表于 2019-9-20 07:59:24

非常感谢！

liuliu7812 · 发表于 2019-9-20 08:49:55

好东西，赞

tvsz123456 · 发表于 2020-1-13 10:26:30

谢谢分享

junli_csm · 发表于 2020-2-17 16:11:16

非常不错，感谢！

蜗。。。牛 · 发表于 2020-3-12 09:06:49

很好的分享，谢谢楼主！

andy2000a · 发表于 2020-3-12 16:07:57

Layout-Dependent Proximity Effects
in Deep Nanoscale CMOS
John Faricelli – April 16, 2009

==
Electrical Variability due to Layout Dependent Effects:
Analysis, Quantification, and Mitigation on 40 and
28nm SOC Designs

==
Lecture 12

Process-induced Variations II:
Systematic
– Lithographic Proximity Effect
– Layout Dependent Strain
– Well Proximity Effect

[资料] sub-40nm LDE(Layout Dependent effect)效应分析

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