Ultra-High-Voltage Charge Pump in Low-Voltage Bulk CMOS Processes(Ming-Dou Ker)

semico_ljj

Ultra-High-Voltage Charge Pump Circuit
in Low-Voltage Bulk CMOS Processes
With Polysilicon Diodes

Ming-Dou Ker, Senior Member, IEEE, and Shih-Lun Chen, Student Member, IEEE

Abstract—An on-chip ultra-high-voltage charge pump circuit realized
with the polysilicon diodes in the low-voltage bulk CMOS
process is proposed in this work. Because the polysilicon diodes
are fully isolated from the silicon substrate, the output voltage of
the charge pump circuit is not limited by the junction breakdown
voltage of MOSFETs. The polysilicon diodes can be implemented
in the standard CMOS processes without extra process steps. The
proposed ultra-high-voltage charge pump circuit has been fabricated
in a 0.25- m 2.5-V standard CMOS process. The output
voltage of the four-stage charge pump circuit with 2.5-V powersupply
voltage (VDD = 2 5 V) can be pumped up to 28.08
V, which is much higher than the n-well/p-substrate breakdown
voltage ( 18.9 V) in a 0.25- m 2.5-V bulk CMOS process.

Index Terms—Charge pump circuit, high-voltage generator,
polysilicon diode.

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