用SILVACO仿锗(GOI)的一些电特性，模型的选择

woaiwole

我是一名本科生，现在在学习SILVACO，想用SILVACO仿锗(GOI)的一些电特性，但不知道在模型的选择上应该用什么模型。我主要想用的模型是量子效应模型、迁移率模型（温度、溶度、迁移率散射）、复合模型（SRH 、Auger、带带随穿机制）、Ge的窄带效应、小尺寸效应。在模型的选择上我应该用那些呢？？比如复合模型用SRH、Auger，上面提到的带带遂穿机制又应该用什么具体的模型，希望知道。或者直接给我一个关于锗的SILVACO仿真程序，感激不尽。MOS管的尺寸比较小，不到50nm。
In the simulation, the hydrodynamic model, quantum-effect model and mobility model related to the temperature and concentration of the carriers and carrier scattering are adopted, and the recombination model includes SRH recombination, Auger recombination and a band-to-band tunneling mechanism. As Ge is used as the channel material, the band-narrowing effect is also considered.
In small-scaled devices, the drift–diffusion model has become inapplicable due to some non-local and unsteady-state physical processes, e.g. hot-carrier effects and velocity overshoot effect, etc. While the fluid-dynamics model can simulate well some of the new physical effects caused by device downscaling. For an ultra-deep submicron device, the gate oxide thickness has been thinned to a few nanometers, so that Fowler–Nordheim tunneling approximation is no longer available for calculation of the gate leakage current, so instead the quantum tunneling effect has to be considered. In addition, the current through the pn junction generated by the band-to-band tunneling is one of the main reasons for off-state leakage current. Therefore, in the simulation, influences of channel doping concentration on the electrical characteristics of the device have been considered, in which variation of mobility and the lifetime of the channel carriers with the doping concentration is involvedŒ.

以上红的字体是我想用到的模型，但对于具体的模型我不知道，我尝试了不少模型，但都没有得到我想要的结果，希望能收到您的回复，谢谢！
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