An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput

jiaoxin12366

Nonvolatile memories with fast write operation at low voltage are required as
storage devices to exceed flash memory performance [1-3]. We develop an 8Mb
multi-layered cross-point ReRAM macro with 443MB/s write throughput (64b
parallel write per 17.2ns cycle), which is almost twice as fast as existing methods,
using the fast-switching performance of TaOx ReRAM [4] and the following
three techniques to reduce the sneak current in bipolar type cross-point cell
array structure in an 0.18μm process. First, memory cell and array technologies
reduce the sneak current with a newly developed bidirectional diode as a memory
cell select element for the first time. Second, we use a hierarchical bitline
(BL) structure for multi-layered cross-point memory with fast and stable current
control. Third, we implement a multi-bit write architecture that realizes fast write
operation and suppresses sneak current. This work is applicable to both highdensity
stand-alone and embedded memory with more stacked memory arrays
and/or scaling memory cells.

songqi945

thx:lo

Jason_ke

新知識..謝謝分享.

dcircuit

kankan

MARKcz

感谢分享

tom0626

Thank you for the information.