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柯明道ESD最新論文(2006)

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发表于 2007-1-22 16:43:49 | 显示全部楼层 |阅读模式

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柯明道ESD最新論文(2006)

[ 本帖最后由 felixkao 于 2007-1-22 17:08 编辑 ]

2006_ESD failure mechanisms of analog I_O cells in 0.18-spl mu_m CMOS technology.pdf

1.35 MB, 下载次数: 125 , 下载积分: 资产 -2 信元, 下载支出 2 信元

柯明道ESD最新論文(2006)

发表于 2007-1-22 20:01:20 | 显示全部楼层
楼主贴个Abstract!
发表于 2007-1-22 22:56:31 | 显示全部楼层
thanks
发表于 2007-1-22 23:20:35 | 显示全部楼层
非常需要啊!
发表于 2007-3-2 09:28:32 | 显示全部楼层
强烈要求来个“摘要”
发表于 2007-3-19 13:52:01 | 显示全部楼层
恩,最好来个Abstract
发表于 2007-3-19 15:35:57 | 显示全部楼层
Abstract—Different electrostatic discharge (ESD) protection
schemes have been investigated to find the optimal ESD protection
design for an analog input/output (I/O) buffer in 0.18-μm
1.8- and 3.3-V CMOS technology. Three power-rail ESD clamp
devices were used in power-rail ESD clamp circuits to compare
the protection efficiency in analog I/O applications, namely:
1) gate-driven NMOS; 2) substrate-triggered field-oxide device,
and 3) substrate-triggered NMOS with dummy gate. From the
experimental results, the pure-diode ESD protection devices and
the power-rail ESD clamp circuit with gate-driven NMOS are
the suitable designs for the analog I/O buffer in the 0.18-μm
CMOS process. Each ESD failure mechanism was inspected by
scanning electron microscopy photograph in all the analog I/O
pins. An unexpected failure mechanism was found in the analog
I/O pins with pure-diode ESD protection design under ND-mode
ESD stress. The parasitic n-p-n bipolar transistor between the
ESD clamp device and the guard ring structure was triggered to
discharge the ESD current and cause damage under ND-mode
ESD stress.
发表于 2007-3-19 23:33:37 | 显示全部楼层
发表于 2007-3-19 23:34:28 | 显示全部楼层
发表于 2007-3-19 23:35:15 | 显示全部楼层
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