在线咨询
eetop公众号 创芯大讲堂 创芯人才网
切换到宽版

EETOP 创芯网论坛 (原名:电子顶级开发网)

手机号码,快捷登录

手机号码,快捷登录

找回密码

  登录   注册  

快捷导航
搜帖子
查看: 2996|回复: 8

[资料] Architecting Phase Change Memory as a Scalable DRAM Alternative PCM

[复制链接]
发表于 2013-6-1 13:25:32 | 显示全部楼层 |阅读模式

马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。

您需要 登录 才可以下载或查看,没有账号?注册

x
Memory scaling is in jeopardy as charge storage and sensing
mechanisms become less reliable for prevalent memory tech-
nologies, such as DRAM. In contrast, phase change memory
(PCM) storage relies on scalable current and thermal mecha-
nisms. To exploit PCM's scalability as a DRAM alternative,
PCM must be architected to address relatively long laten-
cies, high energy writes, and nite endurance.
We propose, crafted from a fundamental understanding of
PCM technology parameters, area-neutral architectural en-
hancements that address these limitations and make PCM
competitive with DRAM. A baseline PCM system is 1.6x
slower and requires 2.2x more energy than a DRAM sys-
tem. Bu er reorganizations reduce this delay and energy
gap to 1.2x and 1.0x, using narrow rows to mitigate write
energy and multiple rows to improve locality and write coa-
lescing. Partial writes enhance memory endurance, provid-
ing 5.6 years of lifetime. Process scaling will further reduce
PCM energy costs and improve endurance.

Architecting Phase Change Memory as a.pdf

1.87 MB, 下载次数: 120 , 下载积分: 资产 -2 信元, 下载支出 2 信元

发表于 2013-6-4 23:52:59 | 显示全部楼层
Good Job ~~~
发表于 2013-6-10 12:13:51 | 显示全部楼层
学习一下
发表于 2013-6-11 22:13:14 | 显示全部楼层
是论文吗?
发表于 2013-6-12 22:01:09 | 显示全部楼层
good,3x
发表于 2014-5-23 22:13:37 | 显示全部楼层
下載參考看看
发表于 2014-5-23 23:01:33 | 显示全部楼层
谢谢学校额
发表于 2016-5-14 17:03:16 | 显示全部楼层
thanks!
发表于 2019-8-1 22:43:34 | 显示全部楼层
好书,多谢分享。
您需要登录后才可以回帖 登录 | 注册

本版积分规则

关闭

站长推荐 上一条 /2 下一条


小黑屋| 手机版| 关于我们| 联系我们| 在线咨询| 隐私声明| EETOP 创芯网
( 京ICP备:10050787号 京公网安备:11010502037710 )

GMT+8, 2024-12-24 03:42 , Processed in 0.025572 second(s), 8 queries , Gzip On, Redis On.

eetop公众号 创芯大讲堂 创芯人才网
快速回复 返回顶部 返回列表