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[资料] Architecting Phase Change Memory as a Scalable DRAM Alternative PCM

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发表于 2013-6-1 13:25:32 | 显示全部楼层 |阅读模式

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Memory scaling is in jeopardy as charge storage and sensing
mechanisms become less reliable for prevalent memory tech-
nologies, such as DRAM. In contrast, phase change memory
(PCM) storage relies on scalable current and thermal mecha-
nisms. To exploit PCM's scalability as a DRAM alternative,
PCM must be architected to address relatively long laten-
cies, high energy writes, and nite endurance.
We propose, crafted from a fundamental understanding of
PCM technology parameters, area-neutral architectural en-
hancements that address these limitations and make PCM
competitive with DRAM. A baseline PCM system is 1.6x
slower and requires 2.2x more energy than a DRAM sys-
tem. Bu er reorganizations reduce this delay and energy
gap to 1.2x and 1.0x, using narrow rows to mitigate write
energy and multiple rows to improve locality and write coa-
lescing. Partial writes enhance memory endurance, provid-
ing 5.6 years of lifetime. Process scaling will further reduce
PCM energy costs and improve endurance.

Architecting Phase Change Memory as a.pdf

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发表于 2013-6-4 23:52:59 | 显示全部楼层
Good Job ~~~
发表于 2013-6-10 12:13:51 | 显示全部楼层
学习一下
发表于 2013-6-11 22:13:14 | 显示全部楼层
是论文吗?
发表于 2013-6-12 22:01:09 | 显示全部楼层
good,3x
发表于 2014-5-23 22:13:37 | 显示全部楼层
下載參考看看
发表于 2014-5-23 23:01:33 | 显示全部楼层
谢谢学校额
发表于 2016-5-14 17:03:16 | 显示全部楼层
thanks!
发表于 2019-8-1 22:43:34 | 显示全部楼层
好书,多谢分享。
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