SRAM读写

zheng070608138

对于双端口SRAM可以不可以对一个地址同时进行读写

HP_ccyz2012

应该不可以吧，遇到这种情况一般会有一个仲裁，待高手解决

apyamy

Yes, you can do that.You can adjust the skew of the input/output clocks to make
it read first or write first without violating the timing spec.

zheng070608138

可以再说的详细点吗？

apyamy

回复 4# zheng070608138

"Read first" means you will read the old content.

"Write first" means you will read the newly written content.


Adjust edge positions of the read/write clocks (read edge before/after write edge) you will either one of the above.


Of course the address, data, and the read/write clock must satisfy the timing constraints of the SRAM.

newnewsitter

控制器做好就行

chen.gang.2012

I have no experience on the dual-port SRAM. Below is my comments, more discussion is welcome.
I do not think adjusting clock edge works.
Read takes more time than write SRAM. the operation clock frequence is limited by read time.
My understanding is the SRAM user does not need to adjust the write clk and read clk
For read first, SRAM shall latch write data in register, performs read operation to get the old value, then write the latching data to the SRAM cell.
For write first, SRAM can pass write data to dout directly, meanwhile the write data is written into hte SRAM cell.
So, I think the key is that the write data is latched in the internal registers.

大暗黑天

可以同时读  只要一端写，另一端对这个地址就暂时不能操作，读写都不行

steven_wgq

可以根据你的需要设计仲裁方式，可以读有效、写有效或者该单元无效

newnewsitter

回复 1# zheng070608138

写的时候，Q端同时出来的就是同一地址原来的数据，这是一个tricky。