[Cambridge2011新书]Nonlinear Transistor Model Parameter Extraction Techniques

jacobshen · 发表于 2012-3-8 14:53:53

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Nonlinear Transistor Model Parameter Extraction Techniques
Matthias Rudolph, Christian Fager and David E. Root
Cambridge University | ISBN: 0521762103 | 2012 | PDF | 368 pages | 13,5 MB

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods.
A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics,
intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise,
and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies.
A variety of real-world industrial examples and measurement results show you how the theories and methods presented
can be used in practice. Whether you use transistor models for evaluation of device processing and you need to
understand the methods behind the models you use, or you want to develop models for existing and new device types,
this is your complete guide to parameter extraction

Nonlinear Transistor Model Parameter Extraction Techniques_0521762103.pdf (13.53 MB, 下载次数: 2177 )

过路心客 · 发表于 2012-3-8 17:41:37

model extraction book, thanks for sharing!

podcast · 发表于 2012-3-8 21:12:24

thx for sharing~

bing131 · 发表于 2012-3-9 21:46:52

对电路设计者来说，这个有点高深了

ma19 · 发表于 2012-3-23 19:00:21

一個電路會不會成功很重要原因之一就在於電晶體模型準確度

long_cc · 发表于 2012-8-24 13:08:55

好像有点难呀，收藏了再说

jonathan2000 · 发表于 2012-11-3 21:57:25

xialaikankan

hyhhao1000 · 发表于 2012-11-3 22:01:09

收藏了！

ljcfcb · 发表于 2012-11-28 23:29:12

谢谢分享啦！

Jason_ke · 发表于 2012-11-29 09:26:26

3q...感謝大大!!!

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