SRAM Stability Analysis Considering Gate Oxide SBD, NBTI and HCI

myings · 发表于 2011-2-3 18:16:57

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SRAM Stability Analysis Considering Gate Oxide SBD, NBTI and HCI

ABSTRACT
For ultrathin gate oxide, soft breakdown (SBD) has been
extensively studied but not fully integrated into circuit reliability
simulation. Using a 6T SRAM cell as a generic circuit example, the
time-dependent SBD was incorporated into circuit degradation
analysis based on the exponential defect current growth model [1].
SRAM cell stability degradation due to individual failure mechanism
was characterized. Multiple failure mechanisms degradation effect
was also studied in regard of SRAM cell operation. Simulation
results showed that gate oxide SBD is the dominating failure
mechanism which causes SRAM stability and operation degradation,
NBTI and HCI have much less effect.

SRAM Stability Analysis Considering Gate Oxide SBD NBTI and HCI.pdf (319.34 KB, 下载次数: 267 )

zh123456789 · 发表于 2011-2-5 10:50:10

谢谢啊

alenanderson · 发表于 2011-2-5 16:20:47

Thanks for sharing

kebon22 · 发表于 2011-2-20 14:27:04

thank u

arklau · 发表于 2011-2-23 22:59:02

楼主辛苦了！谢谢

verilog_sh · 发表于 2011-7-21 21:32:11

谢谢楼主分享

wufuwei · 发表于 2011-7-21 21:34:36

good paper

soul8 · 发表于 2011-8-30 00:20:48

感谢楼主分享！

liiru · 发表于 2011-12-8 17:03:30

很不错的资料啊，谢谢分享

fufuck · 发表于 2011-12-8 22:16:48

多谢谢，nice sharing

[资料] SRAM Stability Analysis Considering Gate Oxide SBD, NBTI and HCI

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