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This thesis addresses different generations of MOSFET CMOS transistormodels and examines the models that would be appropriate for variousapplications based on the number of parameters given. Choosing theright transistor model has always been the biggest challenge whentransistor models are used in VLSI circuit simulation. This choice notonly affects the simulation time but also the accuracy of the resultsobtained. In this thesis we give quantitative results to show howchoosing the correct model for simulation will allow us to makeappropriate trade-offs between simulation time and simulation values.We compare simulation results of Verilog-AMS models with simulationresults in SPICE. |
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