SiGe的一些新书(CRC,wiley)

chaogao

Fabrication of SiGe HBT BiCMOS Technology
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

[ 本帖最后由 chaogao 于 2009-7-7 15:03 编辑 ]

chaogao

Measurement and Modeling of Silicon Heterostructure Devices
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

[ 本帖最后由 chaogao 于 2009-7-7 12:16 编辑 ]

chaogao

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

[ 本帖最后由 chaogao 于 2009-7-7 12:16 编辑 ]

chaogao

Silicon Heterostructure Devices
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

[ 本帖最后由 chaogao 于 2009-7-7 12:16 编辑 ]

chaogao

Silicon Germanium: Technology, Modeling, and Design
Raminderpal Singh, Modest M. Oprysko, David Harame

                               
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"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications."
-Ron Wilson, EETimes

"SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it."
-Alberto Sangiovanni-Vincentelli
Professor, University of California, Berkeley
Cofounder, Chief Technology Officer, Member of Board
Cadence Design Systems Inc.

Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to:
* Detail many of IBM's SiGe technology development programs
* Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling
* Discuss IBM's design automation and signal integrity knowledge and implementation methodologies
* Illustrate design applications in a variety of IBM's SiGe technologies
* Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design


Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits.

"This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development."
-Ron Wilson
Silicon Engineering Editor, EETimes

"This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods."
-John Kelly
Senior Vice President and Group Executive, Technology Group, IBM

[ 本帖最后由 chaogao 于 2009-7-7 12:17 编辑 ]

chaogao

SiGe Heterojunction Bipolar Transistors
Peter Ashburn

                               
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SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features:

• SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications
• Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors
• Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology.

Essential reading for practising microelectronics engineers and researchers.
Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

[ 本帖最后由 chaogao 于 2009-7-7 12:17 编辑 ]

chaogao

foundation of rf cmos and sige bicoms technologies

This paper provides a detailed description of the IBM SiGe
BiCMOS and rf CMOS technologies. The technologies provide
high-performance SiGe heterojunction bipolar transistors
(HBTs) combined with advanced CMOS technology and a
variety of passive devices critical for realizing an integrated
mixed-signal system-on-a-chip (SoC). The paper reviews the
process development and integration methodology, presents the
device characteristics, and shows how the development and
device selection were geared toward usage in mixed-signal IC
development.

[ 本帖最后由 chaogao 于 2009-7-7 12:15 编辑 ]

chaogao

Circuits and Applications Using Silicon Heterostructure Devices
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

chaogao

Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA

                               
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Summary
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.

Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

chaogao

Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
John D. Cressler,  Georgia Institute of Technology, Atlanta, USA
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