SIC power device.pdf

andyjackcao

Chapter 1 Introduction 1
1.1 Ideal and Typical Power Device Characteristics 3
1.2 Unipolar Power Devices 6
1.3 Bipolar Power Devices 8
1.4 MOS-Bipolar Power Devices 9
1.5 Ideal Drift Region for Unipolar Power Devices 11
1.6 Summary 13
References 14
Chapter 2 Material Properties and Technology 15
2.1 Fundamental Properties 16
2.1.1 Energy Band Gap 17
2.1.2 Impact Ionization Coefficients 21
2.1.3 Electron Mobility 23
2.2 Other Properties Relevant to Power Devices 25
2.2.1 Donor and Acceptor Ionization Energy Levels 25
2.2.2 Recombination Lifetimes 26
2.2.3 Metal-Semiconductor Contacts 26
2.3 Fabrication Technology 28
2.3.1 Diffusion Coefficients and Solubility of Dopants 28
2.3.2 Ion Implantation and Annealing 29
2.3.3 Gate Oxide Formation 29
2.3.4 Reactive Ion Etching of Trenches 32
2.4 Summary 32
References 33
Chapter 3 Breakdown Voltage 37
3.1 One-Dimensional Abrupt Junction 37
3.2 Schottky Diode Edge Termination 44
3.2.1 Planar Schottky Diode Edge Termination 44
3.2.2 Planar Schottky Diode with Field Plate Termination 45
3.2.3 Schottky Diode with Floating Metal Rings 50
3.2.4 Schottky Diode Edge Termination with Argon Implant ....50
3.2.5 Schottky Diode Edge Termination with RESP Region 52
3.3 P-N Junction Edge Termination 53
3.3.1 Planar Junction Edge Termination 53
3.3.2 Planar Junction Edge Termination with Field Plate 57
3.3.3 Planar Junction Edge Termination with Floating Rings 61
3.3.4 Planar Junction Edge Termination with P-Extension 62
3.4 Summary 68
References 69
Chapter 4 PiN Rectifiers 71
4.1 One-Dimensional PiN Structure 71
4.2 Experimental Results 79
4.3 Summary 80
References 81
Chapter 5 Schottky Rectifiers 83
5.1 Schottky Rectifier Structure: Forward Conduction 84
5.1.1 Forward Conduction: Simulation Results 88
5.1.2 Forward Conduction: Experimental Results 90
5.2 Schottky Rectifier Structure: Reverse Blocking 91
5.3 Schottky Rectifier Structure: Impact of Defects 96
5.4 Reliability Issues 100
5.5 Summary 100
References 101
Chapter 6 Shielded Schottky Rectifiers 103
6.1 Junction Barrier Schottky (JBS) Rectifier Structure 104
6.1.1 JBS Rectifier Structure: Forward Conduction Model 106
6.1.2 JBS Rectifier Structure: Reverse Leakage Model 108
6.1.3 JBS Rectifier Structure: Simulation Results 109
6.1.4 JBS Rectifier Structure: Experimental Results 118
6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure 120
6.2.1 TMBS Rectifier Structure: Simulation Results 121
6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure... 124
6.3.1 TSBS Rectifier Structure: Simulation Results 127
6.3.2 TSBS Rectifiers: Experimental Results 138
6.4 Summary 138
References 139
Chapter 7 Metal-Semiconductor Field Effect Transistors 141
7.1 Trench Junction (Metal-Semiconductor) FET Structure 142
7.1.1 Forward Blocking 144
7.1.2 On-State 148
7.2 Trench MESFET Structure: Simulation Results 151
7.2.1 On-State Characteristics 151
7.2.2 Blocking Characteristics 154
7.2.3 Output Characteristics 163
7.3 JFET Structure: Simulation Results 165
7.4 Planar MESFET Structure 168
7.4.1 Forward Blocking 170
7.4.2 On-State Resistance 170
7.4.2 On-State Resistance 170
7.5 Planar MESFET Structure: Numerical Simulations 174
7.5.1 On-State Characteristics 174
7.5.2 Blocking Characteristics 177
7.5.3 Output Characteristics 187
7.5.4 Gate Contact Shielding 189
7.6 Experimental Results: Trench Gate Structures 191
7.7 Experimental Results: Planar Gate Structures 194
7.8 Summary 195
References 196
Chapter 8 The Baliga-Pair Configuration 199
8.1 The Baliga-Pair Configuration 201
8.1.1 Voltage Blocking Mode 202
8.1.2 Forward Conduction Mode 203
8.1.3 Current Saturation Mode 203
8.1.4 Switching Characteristics 204
8.1.5 Fly-Back Diode 204
8.2 Baliga-Pair: Simulation Results 205
8.2.1 Voltage Blocking Mode 206
8.2.2 Forward Conduction Mode 208
8.2.3 Current Saturation Mode 210
8.2.4 Switching Characteristics 211
8.2.5 Fly-Back Diode 214
8.3 Baliga-Pair Configuration: Experimental Results 217
8.4 Summary 217
References 218
Chapter 9 Planar Power MOSFETs 221
9.1 Planar Power MOSFET Structure 223
9.1.1 Blocking Characteristics 224
9.1.2 Forward Conduction 227
9.1.3 Threshold Voltage 234
9.1.4 Threshold Voltage Simulations 238
9.1.5 Hot Electron Injection 241
9.2 Planar Power MOSFET Structure: Numerical Simulations 242
9.2.1 Blocking Characteristics 243
9.2.2 On-State Characteristics 247
9.2.3 Output Characteristics 250
9.3 Planar Power MOSFET: Experimental Results 252
9.3.1 Silicon Carbide MOSFET: Inversion Layer Mobility 253
9.3.1 Silicon Carbide MOSFET: Inversion Layer Mobility 253
9.3.2 The 4H-SiC Planar MOSFET: Experimental Results 254
9.4 Summary 254
References 256
Chapter 10 Shielded Planar MOSFETs 259
10.1 Shielded Planar MOSFET Structure 260
10.1.1 Blocking Mode 261
10.1.2 Forward Conduction 262
10.1.3 Threshold Voltage 267
10.1.4ACCUFET Structure: Threshold Voltage Simulations....270
10.2 Planar Shielded Inversion-Mode MOSFET: Simulations 276
10.2.1 Blocking Characteristics 276
10.2.2On-State Characteristics 279
10.2.3 Output Characteristics 281
10.3 Planar Shielded ACCUFET Structure: Simulations 282
10.3.1 Blocking Characteristics 283
10.3.2 On-State Characteristics 290
10.3.3 Output Characteristics 295
10.4 Planar Shielded MOSFET Structures: Experimental Results 297
10.4.1 Silicon Carbide MOSFET: Accumulation Mobility 298
10.4.2Inversion-Mode MOSFET: Experimental Results 300
10.4.3 Accumulation-Mode MOSFET: Experimental Results....301
10.5 Summary 303
References 304
Chapter 11 Trench-Gate Power MOSFETs 307
11.1 Trench-Gate Power MOSFET Structure 308
11.1.1 Blocking Characteristics 309
11.1.2 Forward Conduction 310
11.1.3 Threshold Voltage 316
11.2 Trench-Gate Power MOSFET Structure: Simulations 318
11.2.1 Blocking Characteristics 318
11.2.2 On-State Characteristics 323
11.2.3 Output Characteristics 325
11.3 Accumulation-Mode Trench-Gate Power MOSFET 326
11.4 High Permittivity Gate Insulator 328
11.5 Trench-Gate Power MOSFET: Experimental Results 333
11.6 Summary 335
References 336
Chapter 12 Shielded Trench-Gate Power MOSFETs 339
12.1 Shielded Trench-Gate Power MOSFET Structure 340
12.1.1 Blocking Characteristics 341
12.1.2Forward Conduction 342
12.1.3 Threshold Voltage 348
12.2 Shielded Trench-Gate Power MOSFET: Simulations 348
12.2.1 Blocking Characteristics 349
12.2.2 On-State Characteristics 355
12.2.3 Output Characteristics 357
12.3 Shielded Trench-Gate MOSFET: Experimental Results 358
12.4 Summary 360
References 361
Chapter 13 Charge Coupled Structures 363
13.1 Charge Coupled Silicon Carbide Structures 364
13.2 Ideal Specific On-Resistance 367
13.3 Charge Coupled Schottky Rectifier Structure 371
13.3.1 Blocking Characteristics 372
13.3.20n-State Characteristics 377
13.4 Enhanced Charge Coupled Schottky Rectifier Structure 379
13.4.1 Blocking Characteristics 380
13.4.20n-State Characteristics 385
13.4.3 Charge Optimization 386
13.4.4Charge Imbalance 390
13.5 Charge Coupled JFET Structure 394
13.5.1 Blocking Characteristics 396
13.5.20n-State Characteristics 399
13.5.3 Output Characteristics 403
13.6 Shielded Charge Coupled MOSFET Structure 404
13.6.1 Blocking Characteristics 406
13.6.2 On-State Characteristics 410
13.6.3 Output Characteristics 417
13.6.4 Switching Characteristics 418
13.7 Summary 421
References 422
Chapter 14 Integral Diodes 425
14.1 Trench-Gate MOSFET Structure 427
14.2 Shielded Trench-Gate MOSFET Structure 433
14.3 Planar Shielded ACCUFET Structure 439
14.4 Charge Coupled MOSFET Structure 441
14.5 Summary 444
References 445
Chapter 15 Lateral High Voltage FETs 447
15.1 Fundamental Analysis 448
15.2 Lateral High Voltage Buried Junction FET Structure 450
15.3 Lateral High Voltage MESFET Structure 452
15.4 Lateral High Voltage MOSFET Structure 453
15.5 Lateral MOSFET Structure with Field Plates 457
15.6 Lateral High Voltage Shielded MOSFET Structure 461
15.7 Lateral High Voltage MOSFET Structure Optimization 465
15.8 Lateral HV-MOSFET Structure: Experimental Results 471
15.9 Summary 472
References 474
Chapter 16 Synopsis 477
16.1 Typical Motor Control Application 478
16.2 Motor Control Application: Silicon IGBT and P-i-N Rectifier ..483
16.3 Motor Control Application: Silicon IGBT and SiC Rectifier 486
16.4 Motor Control Application: SiC MOSFET and Rectifier 488
16.5 Motor Control Application: Comparison of Cases 489
16.6 Summary 490
References .491

andyjackcao

part a

[ 本帖最后由 andyjackcao 于 2009-4-22 23:47 编辑 ]

andyjackcao

part                   b

[ 本帖最后由 andyjackcao 于 2009-4-22 23:51 编辑 ]

craigwang

great

heartsoar090420

好资料！ 顶上去

charlie11

thank you 我什么看不到附件

andyjackcao

part  c

andyjackcao

part         d

andyjackcao

part       5

craigwang

good book