RF ESD 设计 IEEE Paper

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“An ESD-protected 5-GHz differential low-noise amplifier in a 130-nm CMOS process,” Y.-W. Hsiao and Ming-Dou Ker
Proc. of 2008 IEEE Custom Integrated Circuits Conference (CICC), San Jose, USA, Sep. 21-24, 2008, pp. 233-236. (EI)

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“Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits,”
C.-Y. Lin and Ming-Dou Ker
Proc. of 2008 International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Jul. 7-11, 2008, pp. 58-61. (EI)

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“ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR,”
Ming-Dou Ker, C.-Y. Lin, and G.-X. Meng
Proc. of 2008 IEEE International Symposium on Circuits and Systems (ISCAS), Seattle, USA, May 18-21, 2008, pp. 1292-1295. (EI)

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“ESD protection design for RF circuits in CMOS technology with low-C implementation,” (invited paper)
C.-Y. Lin and Ming-Dou Ker
Proc. of the 7th International Semiconductor Technology Conference (ISTC 2008), Shanghai, China, Mar. 15-17, 2008, pp. 70-75.

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“Low-capacitance SCR with waffle layout structure for on-chip ESD protection in RF ICs,”
Ming-Dou Ker and C.-Y. Lin
IEEE Trans. on
Microwave Theory and Techniques, vol. 56, no. 5, pp. 1286-1294, May 2008. (SCI, EI)

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“Investigation and design of on-chip power-rail ESD clamp circuits without suffering latchup-like failure during system-level ESD test,”
Ming-Dou Ker and C.-C. Yen
IEEE Journal of Solid-State Circuits, vol. 43, no. 11, pp. 2533-2545, Nov. 2008. (SCI, EI)

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“Low-capacitance and fast turn-on SCR for RF ESD protection,”
C.-Y. Lin, Ming-Dou Ker, and G.-X. Meng
IEICE Trans. on Electronics, vol. E91-C, no. 8, pp. 1321-1330, Aug. 2008. (SCI, EI)

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remember

lipinshengxp

非常好的资料！！！！！！！！！！！！！！！！！！！！

lipinshengxp

非常好的资料！！！！！！！！！！！！！！！！！！！！