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1.Characterization of Soft Errors Caused by Single Event Upsets in CMOS Processes
2.Characterization and Modeling of Run-Time Techniques for Leakage Power Reduction
3.Improved Hot-Electron Reliability in Strained-Si nMOS
4.The End of CMOS Scaling
5.Silicon_Germanium Strucrture in Surrounding-Gate Strain-Silicon Nanowire FETs
6.Opposing Dependence of the Electron and Hole Gate Currents in SOI MOSFETs Under Uniaxial Strain
7.Electronic Properties of Silicon Nanowires
8.Mobility-ENhancement Technologies
9.Physics-Based Single-Piece Charge Model for Strained-Si MOSFETs
10.A Logic Nanotechnology Featuring Strained-Silicon
11.Time-Resolved Measurements of Self-Heating in SOI and Strained-Silicon MOSFETs Using Photon Emission Microscopy
12.Thin-Film Strained-SOI CMOS Devices—Physical Mechanisms for Reduction of Carrier Mobility
[ 本帖最后由 suk.qi 于 2008-7-17 08:46 编辑 ] |
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发表于 2008-7-16 17:36:29
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