HCI reliability study on MOST (Lg=0.12 μm, Gox=20A)

suk.qi · 发表于 2008-7-16 17:22:05

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Hot-carriers reliability study on MOS transistors from very advanced CMOS technology (channel length 0.12 μm, oxide thickness 20 Ǻ)

Report of internship in STMicroelectronics
Period: March – August 2001
Reliability Group – Research & Development Central, ST Crolles

Introduction
Subject:
analysis of electrical parameters degradation during operation of “GO1 High Speed” MOS
transistor (technology HCMOS9, channel length 0.12 μm, oxide thickness 20 Ǻ).
Internship:
 Company details: STMicroelectronics Research & Development Central, ST
Crolles
 Department details: Reliability Group; its function is to evaluate the reliability
performance of all the devices developed in the CMOS and BICMOS
technologies

ez123 · 发表于 2008-7-16 17:32:34

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caibanbrain · 发表于 2008-9-4 22:56:15

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jansenchen · 发表于 2008-9-4 23:39:28

thanks!

RTRTRT1234 · 发表于 2009-3-20 22:04:29

thanks!!

hhaahaha · 发表于 2009-5-4 12:54:00

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wangchihhung5 · 发表于 2009-6-14 22:06:50

I need this right now. Good materials. Thanks for sharing!

wufuwei · 发表于 2010-6-9 23:09:05

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wufuwei · 发表于 2010-6-10 08:45:02

A good article!

ydfqing · 发表于 2014-7-21 15:47:22

hao dongxi

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HCI reliability study on MOST (Lg=0.12 μm, Gox=20A)

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