A New Concept for the Lateral DMOS Transistor for Smart Power IC's

suk.qi · 发表于 2008-7-3 09:43:17

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A New Concept for the Lateral DMOS Transistor for Smart Power IC's:
A new type LDMOS with U-shape trench, filled with oxide is introduced, the U-trench can play a great role of enhancing the breakdown voltage, which is improved by the vertical current flow direction and buried breakdown point.

And the technique can also reduce the die size, A higher breakdown voltage can be obtained from the same drift length by U-trench than conventional LDMOS.

[ 本帖最后由 suk.qi 于 2008-7-3 09:50 编辑 ]

andy2000a · 发表于 2009-4-14 14:14:10

尋找 dmos 或 bcd process 這本看來可以參考 .. 不知道還有沒有人有研究 700v DMOS PROCESS ?

dai.image · 发表于 2009-4-14 21:35:31

谢谢楼主发帖，顶上去。
谢谢楼主共享，顶上去。
谢谢楼主共享，顶上去。

super_im · 发表于 2010-5-13 21:16:02

我正需要这样的文章，谢谢！

cp1927 · 发表于 2010-5-14 15:27:49

ieee paper that is old paper

dolp77 · 发表于 2010-10-14 11:28:26

thanks

caosl · 发表于 2010-10-14 12:16:32

谢谢楼主

darklord111 · 发表于 2011-12-15 00:20:25

谢谢楼主

chenxiaoming · 发表于 2011-12-16 20:19:04

kankan

alan194 · 发表于 2012-12-22 18:57:25

怎么打不开

A New Concept for the Lateral DMOS Transistor for Smart Power IC's

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