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Abstract
Device model is a bridge that connects circuit design with process and it is very
important to circuit design. Power devices such as LDMOS have a lot of advantages
such as high switch speed and good thermal stability. It promotes SPIC to achieve and
develop that LDMOS can easy to integrate with other devices. Now, many
researchers are engaged in the work of develop LDMOS model, but hitherto there
isn’t an omnipotent model can be applied to all LDMOS that have different structure.
This project is supported by national 863 item“smart power integration tech
technique research”(2002AA11Z1540). We have done the following work in this
paper: 1. designing the key device of switching power supply management Integrated
Circuit — a single crystal diffused LDMOS. 2. Extracting model parameters of low
voltage MOS by using the software AURORA. 3. Testing MOS transistors including
high voltage LDMOS and low voltage MOS after the process experiment, then
analyze the results of test.
During the design of the high voltage LDMOS and develop its model, we use 2D
numerical simulator MEDICI to do the device simulation and optimizing design, then
we get the structure parameter of the LDMOS. Also, we analyze on the LDMOS
quasi-saturation mechanisms and the characteristic of quasi-drain. Then a sub-circuit
model is shown based on the concept of macro model.
During extracting the model parameters of MOS transistors, a parameter
extraction software AURORA is used. First, we learn what’s AURORA and how to
use it, and then we illustrate how to extract model parameters and how to get
satisfying results in details. |
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eetop公众号
创芯大讲堂
创芯人才网
发表于 2008-5-26 14:34:52
