减少 leakage power 方法

nhaiwen

ICC user guide 里提到
using cells with a lower threshold-voltage for timing-critical paths and cells with a higher-threshold voltage for other paths can reduce the leakage power without violating the delay
又提到
One of the techniques to reduce the leakage power is to have higher-threshold voltage cells in the timing-critical path and lower-threshold voltage cells on the other paths.
到底是用 higher-threshold voltage cells 减少 leakage power 呢？
还是用 lower-threshold voltage cells 减少leakage power呢？

angangang3484

higher-threshold voltage cells

nhaiwen

回复 2# angangang3484 谢谢版主

hstowy

不是很明白。。。

wlf204

igher-threshold voltage cells 减少 leakage powerv

yl5495

iCC那个命令可以实现这个功能？

kay443

意思是说关键路径不用高阈值的cell，以满足时序。而非关键路径尽量用高阈值cell减少leakage。

2004changhe

   

ICC user guide 里提到
using cells with a lower threshold-voltage for timing-critical paths and cel ...
nhaiwen 发表于 2014-2-28 11:18

                               
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又提到
One of the techniques to reduce the leakage power is to have higher-threshold voltage cells in the timing-critical path and lower-threshold voltage cells on the other paths.

这句话有问题啊  哪里看到的呢？

qc3g09

可以这样理解，一个mos管 的Vgs 小于这个vth 时候有一个漏电流。这个就是vth 小的时候导致静态功耗大。