A NEW 4-PHASE CHARGE PUMP WITHOUT BODY EFFECTS FOR LOW SUPPLY VOLTAGES

fhchen2002

Authors: HongChin Lin, JainHao Lu, Yen-Tai Lin
This paper appears in 2002 IEEE Asia-Pacific Conference

Abstract:
A new four-phase charge pumping circuit for low supply voltages using 0.6um triple-well CMOS technology to generate high negative boosted voltage is presented.  With the new substrate connected technique, the influence of threshold voltagte (-0.94 V) is minimized and the body effect is almost eliminated.  A five-stage charge pump can effeciently pump lower than -7V at supply voltage of 1.8V with 100 uA loading current.

Yen-Tai Lin is with eMemory Technology 力旺科技
HongChin Lin and JainHao Lu are with Chung-Hsing Univ. 中興大學 TaiChung 台中, Taiwan