基于180nm bcd工艺画版图,用到了带nbl层的管子,nbl层电位连接到了pad,目前遇到的drc问题为:HVESD.S.35_6_9_12_16_20_24V { @ Min space between SH_N and {((NP AND OD) INSIDE ((SH_P OR PDD) OR HVPW)) OR (((NP AND OD) NOT (PO OR RPDUMMY)) INSIDE PW)} connected to different-potential PADs >= 18 um。想请教下这里的 {((NP AND OD) INSIDE ((SH_P OR PDD) OR HVPW)) OR (((NP AND OD) NOT (PO OR RPDUMMY)) INSIDE PW)}是什么意思,除了加大间距还有无别的方法,谢谢