MRAM related paper

LeoWei

Magnetoresistive Random-Access Memory

• uses spintronics to store information in the magnetic direction of thin-film elements on a silicon substrate.
• stores data as magnetic states (e.g., parallel or anti-parallel) within magnetic tunneling junction (MTJ) cells.
• The electrical resistance of the MTJ changes based on the relative magnetic orientation, representing the stored data.
  

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