求助两篇会议short course 讲义，

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https://ieeexplore.ieee.org/document/10134048
Advanced Materials Engineering Solutions to Address DRAM Scaling Challenges
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)阅读量：11

作者：
S Varghese




摘要：
Demand for lower-cost, higher-density DRAM has never been greater as the Internet of Things (IoT), autonomous vehicles and 5G connectivity add more devices and exponentially increase data, further straining the edge and cloud computing infrastructure. IoT devices are estimated to total 500 billion by 2030 and generate a yottabyte of data per year—that's ten to the power of 24 bytes. The value of data comes from processing it, increasingly by using AI to derive actionable insights. This requires affordable, high-performance DRAM, and lots of it. DRAM makers are racing to overcome several physical limitations that, if left unresolved, will impede DRAM performance, power, area, and cost. This talk will examine the challenges and materials solutions that enable continued scaling of the DRAM cell as well as peripheral circuitry.

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关键词：
Random access memory；Internet of Things；Very large scale integration；Costs；Cloud computing；Autonomous vehicles；Artificial intelligence



会议名称：
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
下载的只有目录，无实际内容


2. S. Cha, “DRAM technology-history & challenges,” in IEDM Tech. Dig.,2011.

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