It is really good for BJT applying to LNA Design, since it can get better noise feature and cost less power than MOS transistor. It is something like that we usually use NMOS instead of PMOS in LNA field. Especially the matching point about the emitter degeneration inductor is something different from T.H.Lee although the equation is the same. If you can understand the point, you will be sure to get mastering LNA design.