icc check tluplus时没问题，但是过程中出现warning

Patrick0809

加载tluplus后check，报告无误。

--------- Sanity Check on TLUPlus Files -------------
1. Checking the conducting layer names in ITF and mapping file ...
[ Passed! ]
2. Checking the via layer names in ITF and mapping file ...
[ Passed! ]
3. Checking the consistency of Min Width and Min Spacing between MW-tech and ITF ...
[ Passed! ]

但是在后面诸多流程中都会出现warning：
**** WARNING:cannot find Contact(2) for via-region
在tf文件中找了下关于Contact的描述，只有类似于 ContactCode        "VI1_HV" {  这种描述，而且他们的contactCodeNumber没有等于2的。
map映射itf文件时，有两个孔没有映射，在tf文件中没找到polycont  subcont  这两个孔对应的描述，不知道是不是这个原因导致了此warning。

下面附上itf文件和map文件。

map：

conducting_layers
ME1      METAL1
ME2      METAL2
ME3      METAL3
PO1      POLY

via_layers
VI1      Mvia1
VI2      Mvia2

itf:

TECHNOLOGY=G-DF-EHV162N-1.8V_5.5V_+_-16V-1P3M1T-HEPTA_WELL_GOX33_120_850_ULTRA_SHRINK_STARRCXT-LPE-1.0-P3
GLOBAL_TEMPERATURE=25.0

DIELECTRIC PASSV2               { THICKNESS=0.70000 MEASURED_FROM=TOP_OF_CHIP SW_T=0.70000 TW_T=0.70000 ER=7.00000 }
DIELECTRIC PASSV1               { THICKNESS=0.60000 MEASURED_FROM=TOP_OF_CHIP SW_T=0.60000 TW_T=0.60000 ER=4.10000 }
CONDUCTOR  METAL3               { THICKNESS=0.86000 WMIN=0.39600 SMIN=0.39600 RPSQ=0.03600 CRT1=3.415E-03 CRT2=-2.260E-07 }

DIELECTRIC IMD2C                { THICKNESS=1.13000 MEASURED_FROM=IMD1C ER=4.10000 }
DIELECTRIC IMD2B                { THICKNESS=0.42200 MEASURED_FROM=TOP_OF_CHIP SW_T=0.42200 TW_T=0.42200 ER=3.90000 }
DIELECTRIC IMD2A                { THICKNESS=0.07800 MEASURED_FROM=TOP_OF_CHIP SW_T=0.07800 TW_T=0.07800 ER=4.20000 }
CONDUCTOR  METAL2               { THICKNESS=0.48000 WMIN=0.25200 SMIN=0.25200 RPSQ=0.08000 CRT1=3.304E-03 CRT2=-4.983E-07 }

DIELECTRIC IMD1C                { THICKNESS=1.03000 MEASURED_FROM=ILD1D ER=4.10000 }
DIELECTRIC IMD1B                { THICKNESS=0.42200 MEASURED_FROM=TOP_OF_CHIP SW_T=0.42200 TW_T=0.42200 ER=3.90000 }
DIELECTRIC IMD1A                { THICKNESS=0.07800 MEASURED_FROM=TOP_OF_CHIP SW_T=0.07800 TW_T=0.07800 ER=4.20000 }
CONDUCTOR  METAL1               { THICKNESS=0.38000 WMIN=0.21600 SMIN=0.21600 RPSQ=0.11900 CRT1=3.203E-03 CRT2=-4.119E-07 }

DIELECTRIC ILD1D                { THICKNESS=0.60000 MEASURED_FROM=STI ER=4.10000 }
DIELECTRIC ILD1C                { THICKNESS=0.03000 MEASURED_FROM=TOP_OF_CHIP SW_T=0.03000 TW_T=0.03000 ER=7.00000 }
DIELECTRIC ILD1B                { THICKNESS=0.00000 MEASURED_FROM=TOP_OF_CHIP SW_T=0.03250 TW_T=0.00000 ER=7.00000 }
DIELECTRIC ILD1A                { THICKNESS=0.00000 MEASURED_FROM=TOP_OF_CHIP SW_T=0.02000 TW_T=0.00000 ER=4.10000 }
CONDUCTOR  POLY                 { THICKNESS=0.20000 WMIN=0.18000 SMIN=0.21600 RPSQ=8.10000 CRT1=3.223E-03 CRT2=4.264E-07 GATE_TO_CONTACT_SMIN=0.12600 }

DIELECTRIC STI                  { THICKNESS=0.40000 ER=4.10000 }

VIA Mvia2  { FROM=METAL3 TO=METAL2 AREA=0.063504 RPV=5.6 }
VIA Mvia1  { FROM=METAL2 TO=METAL1 AREA=0.063504 RPV=5.6 }
VIA polycont  { FROM=METAL1 TO=POLY AREA=0.046656 RPV=9.6 }
VIA subcont  { FROM=METAL1 TO=SUBSTRATE AREA=0.046656 RPV=10.6 }