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CONTENTS
About the Series ix
Preface xi
1 Epitaxial Growth of High-Quality Silicon Carbide: Fundamentals and
Recent Progress
T.Kimoto and H.Matsunami 1
2 Surface Characterization of 6H-SiC Reconstructions
Kian-Ping Loh, Eng-Soon Tok, and Andrew T.S.Wee 44
3 Exciton and Defect Photoluminescence from SiC
T.Egilsson, I.G.Ivanov, N.T.Son, A.Henry, J.P.Bergman, and E.Janzén 87
4 Deep-Level Defects in SiC Materials and Devices
A.A.Lebedev 128
5 Ion-Implantation in SiC
Mulpuri V.Rao 170
6 Ohmic Contacts to SiC for High Power and High Temperature Device
Applications
M.W.Cole and P.C.Joshi 209
7 SiC Avalanche Breakdown and Avalanche Photodiodes
Feng Yan and Jian H.Zhao 285
8 Porous SiC Technology
Stephen E.Saddow, Marina Mynbaeva, and Michael F.MacMillan 327
Index 396
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发表于 2023-4-25 15:41:47
